Cd (63S1 U+2192; 53P1) Laser at 480 nm Pumped by a Transverse Discharge

D. P. Greene; J. G. Eden

doi:10.1109/JQE.1983.1071816

Cd (63S1 U+2192; 53P1) Laser at 480 nm Pumped by a Transverse Discharge

D. P. Greene, J. G. Eden

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Lasing on the 63S1 U+2192; 53P1 line of atomic cadmium at 480 nm has been observed under discharge excitation. Stimulated emission occurs in the afterglow of an ultraviolet (UV) preionized transverse discharge in mixtures of He and H2 with Cd vapor. Lasing occurs only on the 480 nm transition due to selective quenching of the 53P1 state by H2. Therefore, H2 appears to serve the same purpose in Cd as N2 serves for the 63P energy levels of Hg.

Original language	English (US)
Pages (from-to)	1739-1741
Number of pages	3
Journal	IEEE Journal of Quantum Electronics
Volume	19
Issue number	12
DOIs	https://doi.org/10.1109/JQE.1983.1071816
State	Published - Dec 1983

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.1983.1071816

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title = "Cd (63S1 U+2192; 53P1) Laser at 480 nm Pumped by a Transverse Discharge",

abstract = "Lasing on the 63S1 U+2192; 53P1 line of atomic cadmium at 480 nm has been observed under discharge excitation. Stimulated emission occurs in the afterglow of an ultraviolet (UV) preionized transverse discharge in mixtures of He and H2 with Cd vapor. Lasing occurs only on the 480 nm transition due to selective quenching of the 53P1 state by H2. Therefore, H2 appears to serve the same purpose in Cd as N2 serves for the 63P energy levels of Hg.",

author = "Greene, {D. P.} and Eden, {J. G.}",

year = "1983",

month = dec,

doi = "10.1109/JQE.1983.1071816",

language = "English (US)",

volume = "19",

pages = "1739--1741",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Cd (63S1 U+2192; 53P1) Laser at 480 nm Pumped by a Transverse Discharge

AU - Greene, D. P.

AU - Eden, J. G.

PY - 1983/12

Y1 - 1983/12

N2 - Lasing on the 63S1 U+2192; 53P1 line of atomic cadmium at 480 nm has been observed under discharge excitation. Stimulated emission occurs in the afterglow of an ultraviolet (UV) preionized transverse discharge in mixtures of He and H2 with Cd vapor. Lasing occurs only on the 480 nm transition due to selective quenching of the 53P1 state by H2. Therefore, H2 appears to serve the same purpose in Cd as N2 serves for the 63P energy levels of Hg.

AB - Lasing on the 63S1 U+2192; 53P1 line of atomic cadmium at 480 nm has been observed under discharge excitation. Stimulated emission occurs in the afterglow of an ultraviolet (UV) preionized transverse discharge in mixtures of He and H2 with Cd vapor. Lasing occurs only on the 480 nm transition due to selective quenching of the 53P1 state by H2. Therefore, H2 appears to serve the same purpose in Cd as N2 serves for the 63P energy levels of Hg.

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

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ER -

Cd (63S1 U+2192; 53P1) Laser at 480 nm Pumped by a Transverse Discharge

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