Cavity structures for low-loss oxide-confined VCSELs

Kent D. Choquette, H. R. Hadley, Weng W. Chow, Hong Q. Hou, Kent M. Geib, B. E. Hammons, D. Mathes, Robert Hull

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We examine the threshold characteristics of selectively oxidized VCSELs as a function of the number, thickness, and placement of the buried oxide apertures. The threshold current density for small area VCSELs is shown to increase with the number of oxide apertures in the cavity due to increased optical loss, while the threshold current density for broad area VCSELs decreases with increasing number of apertures due to more uniform current injection. Reductions of the threshold gain and optical loss are achieved for small area VCSELs using thin oxide apertures which are displaced longitudinally away from the optical cavity. We show that the optical loss can be sufficiency reduced to allow lasing in VCSELs with aperture area as small as 0.25 micrometer2.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsKent D. Choquette, Dennis G. Deppe
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages194-200
Number of pages7
ISBN (Print)0819424145
StatePublished - Dec 1 1997
Externally publishedYes
EventVertical-Cavity Surface-Emitting Lasers - San Jose, CA, USA
Duration: Feb 13 1997Feb 14 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3003
ISSN (Print)0277-786X

Other

OtherVertical-Cavity Surface-Emitting Lasers
CitySan Jose, CA, USA
Period2/13/972/14/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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