Case study of DPI robustness of a MOS-SCR structure for automotive applications

Yang Xiu, Farzan Farbiz, Akram Salman, Yue Zu, Mariano Dissegna, Gianluca Boselli, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a case study to demonstrate that transient-triggered ESD protection circuits may fail the DPI automotive requirement. A novel scheme is devised to improve the DPI performance of a MOSSCR protection device while maintaining the system-level ESD performance.

Original languageEnglish (US)
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2016, EOS/ESD 2016
PublisherESD Association
ISBN (Electronic)9781585372898
DOIs
StatePublished - Oct 14 2016
Event38th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2016 - Garden Grove (Anaheim), United States
Duration: Sep 11 2016Sep 16 2016

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
Volume2016-October
ISSN (Print)0739-5159

Other

Other38th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2016
CountryUnited States
CityGarden Grove (Anaheim)
Period9/11/169/16/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Case study of DPI robustness of a MOS-SCR structure for automotive applications'. Together they form a unique fingerprint.

  • Cite this

    Xiu, Y., Farbiz, F., Salman, A., Zu, Y., Dissegna, M., Boselli, G., & Rosenbaum, E. (2016). Case study of DPI robustness of a MOS-SCR structure for automotive applications. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2016, EOS/ESD 2016 [7592538] (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; Vol. 2016-October). ESD Association. https://doi.org/10.1109/EOSESD.2016.7592538