Carrier-Specific Femtosecond XUV Transient Absorption of PbI2 Reveals Ultrafast Nonradiative Recombination

Ming Fu Lin; Max A. Verkamp; Joshua Leveillee; Elizabeth S. Ryland; Kristin Benke; Kaili Zhang; Clemens Weninger; Xiaozhe Shen; Renkai Li; David Fritz; Uwe Bergmann; Xijie Wang; André Schleife; Josh Vura-Weis

doi:10.1021/acs.jpcc.7b11147

Carrier-Specific Femtosecond XUV Transient Absorption of PbI₂ Reveals Ultrafast Nonradiative Recombination

Ming Fu Lin, Max A. Verkamp, Joshua Leveillee, Elizabeth S. Ryland, Kristin Benke, Kaili Zhang, Clemens Weninger, Xiaozhe Shen, Renkai Li, David Fritz, Uwe Bergmann, Xijie Wang, André Schleife, Josh Vura-Weis

Research output: Contribution to journal › Article › peer-review

Abstract

Femtosecond carrier recombination in PbI₂ is measured using tabletop high-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy and ultrafast electron diffraction. XUV absorption from 45 to 62 eV measures transitions from the iodine 4d core level to the conduction-band density of states. Photoexcitation at 400 nm creates separate and distinct transient absorption signals for holes and electrons, separated in energy by the 2.4 eV band gap of the semiconductor. The shape of the conduction band, and therefore the XUV absorption spectrum, is temperature-dependent, and nonradiative recombination converts the initial electronic excitation into thermal excitation within picoseconds. Ultrafast electron diffraction (UED) is used to measure the lattice temperature and confirm the recombination mechanism. The XUV and UED results support a second-order recombination model with a rate constant of 2.5 × 10^-9 cm³/s.

Original language	English (US)
Pages (from-to)	27886-27893
Number of pages	8
Journal	Journal of Physical Chemistry C
Volume	121
Issue number	50
DOIs	https://doi.org/10.1021/acs.jpcc.7b11147
State	Published - Dec 21 2017

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/acs.jpcc.7b11147

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Cite this

Lin, M. F., Verkamp, M. A., Leveillee, J., Ryland, E. S., Benke, K., Zhang, K., Weninger, C., Shen, X., Li, R., Fritz, D., Bergmann, U., Wang, X., Schleife, A., & Vura-Weis, J. (2017). Carrier-Specific Femtosecond XUV Transient Absorption of PbI₂ Reveals Ultrafast Nonradiative Recombination. Journal of Physical Chemistry C, 121(50), 27886-27893. https://doi.org/10.1021/acs.jpcc.7b11147

Lin, MF, Verkamp, MA, Leveillee, J, Ryland, ES, Benke, K, Zhang, K, Weninger, C, Shen, X, Li, R, Fritz, D, Bergmann, U, Wang, X, Schleife, A & Vura-Weis, J 2017, 'Carrier-Specific Femtosecond XUV Transient Absorption of PbI₂ Reveals Ultrafast Nonradiative Recombination', Journal of Physical Chemistry C, vol. 121, no. 50, pp. 27886-27893. https://doi.org/10.1021/acs.jpcc.7b11147

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title = "Carrier-Specific Femtosecond XUV Transient Absorption of PbI2 Reveals Ultrafast Nonradiative Recombination",

abstract = "Femtosecond carrier recombination in PbI2 is measured using tabletop high-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy and ultrafast electron diffraction. XUV absorption from 45 to 62 eV measures transitions from the iodine 4d core level to the conduction-band density of states. Photoexcitation at 400 nm creates separate and distinct transient absorption signals for holes and electrons, separated in energy by the 2.4 eV band gap of the semiconductor. The shape of the conduction band, and therefore the XUV absorption spectrum, is temperature-dependent, and nonradiative recombination converts the initial electronic excitation into thermal excitation within picoseconds. Ultrafast electron diffraction (UED) is used to measure the lattice temperature and confirm the recombination mechanism. The XUV and UED results support a second-order recombination model with a rate constant of 2.5 × 10-9 cm3/s.",

author = "Lin, {Ming Fu} and Verkamp, {Max A.} and Joshua Leveillee and Ryland, {Elizabeth S.} and Kristin Benke and Kaili Zhang and Clemens Weninger and Xiaozhe Shen and Renkai Li and David Fritz and Uwe Bergmann and Xijie Wang and Andr{\'e} Schleife and Josh Vura-Weis",

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doi = "10.1021/acs.jpcc.7b11147",

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AU - Lin, Ming Fu

AU - Verkamp, Max A.

AU - Leveillee, Joshua

AU - Ryland, Elizabeth S.

AU - Benke, Kristin

AU - Zhang, Kaili

AU - Weninger, Clemens

AU - Shen, Xiaozhe

AU - Li, Renkai

AU - Fritz, David

AU - Bergmann, Uwe

AU - Wang, Xijie

AU - Schleife, André

AU - Vura-Weis, Josh

PY - 2017/12/21

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AB - Femtosecond carrier recombination in PbI2 is measured using tabletop high-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy and ultrafast electron diffraction. XUV absorption from 45 to 62 eV measures transitions from the iodine 4d core level to the conduction-band density of states. Photoexcitation at 400 nm creates separate and distinct transient absorption signals for holes and electrons, separated in energy by the 2.4 eV band gap of the semiconductor. The shape of the conduction band, and therefore the XUV absorption spectrum, is temperature-dependent, and nonradiative recombination converts the initial electronic excitation into thermal excitation within picoseconds. Ultrafast electron diffraction (UED) is used to measure the lattice temperature and confirm the recombination mechanism. The XUV and UED results support a second-order recombination model with a rate constant of 2.5 × 10-9 cm3/s.

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