Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy

F. Y. Liu, P. B. Griffin, J. D. Plummer, J. W. Lyding, J. M. Moran, J. F. Richards, L. Kulig

Research output: Contribution to journalArticle

Abstract

Profiling of pn junctions on hydrogen passivated Si(100) cross sections was analyzed using scanning capacitance microscopy (SCM). Tunneling measurements were also performed. Measurement locations needed to be correlated with atomic features on the surface for proper interpretation of tunneling behavior, because the electronic structure influenced the current-voltage characteristics. Through measurements on a uniform doped region, the current-voltage characteristics over a dimer and a trough differed, while measurements over similar atomic features were repeatably reproduced.

Original languageEnglish (US)
Pages (from-to)422-426
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number1
StatePublished - Jan 1 2004

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Microscopic examination
Capacitance
capacitance
Spectroscopy
microscopy
Scanning
scanning
Current voltage characteristics
spectroscopy
Electron tunneling
electric potential
troughs
Dimers
Electronic structure
dimers
electronic structure
Hydrogen
cross sections
hydrogen

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Carrier profiling via scanning tunneling spectroscopy : Comparison with scanning capacitance microscopy. / Liu, F. Y.; Griffin, P. B.; Plummer, J. D.; Lyding, J. W.; Moran, J. M.; Richards, J. F.; Kulig, L.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 1, 01.01.2004, p. 422-426.

Research output: Contribution to journalArticle

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