Abstract
Profiling of pn junctions on hydrogen passivated Si(100) cross sections was analyzed using scanning capacitance microscopy (SCM). Tunneling measurements were also performed. Measurement locations needed to be correlated with atomic features on the surface for proper interpretation of tunneling behavior, because the electronic structure influenced the current-voltage characteristics. Through measurements on a uniform doped region, the current-voltage characteristics over a dimer and a trough differed, while measurements over similar atomic features were repeatably reproduced.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 422-426 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 22 |
| Issue number | 1 |
| State | Published - Jan 1 2004 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Carrier profiling via scanning tunneling spectroscopy : Comparison with scanning capacitance microscopy. / Liu, F. Y.; Griffin, P. B.; Plummer, J. D.; Lyding, J. W.; Moran, J. M.; Richards, J. F.; Kulig, L.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 1, 01.01.2004, p. 422-426.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Carrier profiling via scanning tunneling spectroscopy
T2 - Comparison with scanning capacitance microscopy
AU - Liu, F. Y.
AU - Griffin, P. B.
AU - Plummer, J. D.
AU - Lyding, J. W.
AU - Moran, J. M.
AU - Richards, J. F.
AU - Kulig, L.
PY - 2004/1/1
Y1 - 2004/1/1
N2 - Profiling of pn junctions on hydrogen passivated Si(100) cross sections was analyzed using scanning capacitance microscopy (SCM). Tunneling measurements were also performed. Measurement locations needed to be correlated with atomic features on the surface for proper interpretation of tunneling behavior, because the electronic structure influenced the current-voltage characteristics. Through measurements on a uniform doped region, the current-voltage characteristics over a dimer and a trough differed, while measurements over similar atomic features were repeatably reproduced.
AB - Profiling of pn junctions on hydrogen passivated Si(100) cross sections was analyzed using scanning capacitance microscopy (SCM). Tunneling measurements were also performed. Measurement locations needed to be correlated with atomic features on the surface for proper interpretation of tunneling behavior, because the electronic structure influenced the current-voltage characteristics. Through measurements on a uniform doped region, the current-voltage characteristics over a dimer and a trough differed, while measurements over similar atomic features were repeatably reproduced.
UR - http://www.scopus.com/inward/record.url?scp=1642364950&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1642364950&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:1642364950
VL - 22
SP - 422
EP - 426
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 1
ER -