Carrier localization and electronic phase separation in a doped spin-orbit-driven Mott phase in Sr3 (Ir1-x Ru x)2O7

Chetan Dhital, Tom Hogan, Wenwen Zhou, Xiang Chen, Zhensong Ren, Mani Pokharel, Yoshinori Okada, M. Heine, Wei Tian, Z. Yamani, C. Opeil, J. S. Helton, J. W. Lynn, Ziqiang Wang, Vidya Madhavan, Stephen D. Wilson

Research output: Contribution to journalArticlepeer-review


Interest in many strongly spin-orbit-coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J eff=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate Jeff=1/2 Mott insulator, carriers remain localized within a nanoscale phase-separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near-degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.

Original languageEnglish (US)
Article number3377
JournalNature communications
StatePublished - Feb 25 2014
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • General Biochemistry, Genetics and Molecular Biology
  • General Physics and Astronomy


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