Carrier Lifetime of Au-Hyperdoped Ge using Terahertz Spectroscopy

S. Senali Dissanayake, Naheed Ferdous, Hemi Gandhi, Eric Mazur, Elif Ertekin, Meng Ju Sher

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Gold-hyperdoped germanium extends the photodetection beyond the cut-off wavelength of germanium into the infrared wavelengths. Ion implantation followed by pulsed-laser melting process makes a single crystal material with ultrahigh dopant concentrations. The laser parameters influence the dopant's atomic position which leads to different light absorption and carrier transport properties. Time resolved terahertz spectroscopy is used to evaluate the charge carrier lifetime which gives an insight into the defect energetics and atomic location.

Original languageEnglish (US)
Title of host publication2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
PublisherIEEE Computer Society
Pages716
Number of pages1
ISBN (Electronic)9781728166209
DOIs
StatePublished - Nov 8 2020
Externally publishedYes
Event45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 - Virtual, Buffalo, United States
Duration: Nov 8 2020Nov 13 2020

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2020-November
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
Country/TerritoryUnited States
CityVirtual, Buffalo
Period11/8/2011/13/20

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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