Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser

M. Feng; N. Holonyak; A. James; K. Cimino; G. Walter; R. Chan

doi:10.1063/1.2346369

Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser

M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, R. Chan

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A quantum well (160 Å) transistor laser with a 400 μm cavity length that achieves the large 3 dB modulation bandwidth of 13.5 GHz is described. The fast base recombination (transport determined, τ _BL < 10 ps) permits improvement of the carrier-photon damping ratio (>1 / √2), resulting in a resonant peak magnitude of unity and consequently a resonance frequency of ∼0 GHz (no peak) in the small-signal response. Quantum well band filling and bandwidth saturation are observed on the ground state (λ = 1000 nm), and increase with operation on the first excited state (λ = 980 nm).

Original language	English (US)
Article number	113504
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2346369
State	Published - 2006

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Physics and Astronomy (miscellaneous)

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10.1063/1.2346369

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title = "Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser",

abstract = "A quantum well (160 {\AA}) transistor laser with a 400 μm cavity length that achieves the large 3 dB modulation bandwidth of 13.5 GHz is described. The fast base recombination (transport determined, τ BL < 10 ps) permits improvement of the carrier-photon damping ratio (>1 / √2), resulting in a resonant peak magnitude of unity and consequently a resonance frequency of ∼0 GHz (no peak) in the small-signal response. Quantum well band filling and bandwidth saturation are observed on the ground state (λ = 1000 nm), and increase with operation on the first excited state (λ = 980 nm).",

author = "M. Feng and N. Holonyak and A. James and K. Cimino and G. Walter and R. Chan",

note = "Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nanophotonics Technologies, HUNT Center). One of the authors (N.H., Jr.) is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and another authors (M.F) is grateful for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. The authors thank H. Statz for helpfulcomments.",

year = "2006",

doi = "10.1063/1.2346369",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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TY - JOUR

T1 - Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser

AU - Feng, M.

AU - Holonyak, N.

AU - James, A.

AU - Cimino, K.

AU - Walter, G.

AU - Chan, R.

N1 - Funding Information: The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nanophotonics Technologies, HUNT Center). One of the authors (N.H., Jr.) is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and another authors (M.F) is grateful for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. The authors thank H. Statz for helpfulcomments.

PY - 2006

Y1 - 2006

N2 - A quantum well (160 Å) transistor laser with a 400 μm cavity length that achieves the large 3 dB modulation bandwidth of 13.5 GHz is described. The fast base recombination (transport determined, τ BL < 10 ps) permits improvement of the carrier-photon damping ratio (>1 / √2), resulting in a resonant peak magnitude of unity and consequently a resonance frequency of ∼0 GHz (no peak) in the small-signal response. Quantum well band filling and bandwidth saturation are observed on the ground state (λ = 1000 nm), and increase with operation on the first excited state (λ = 980 nm).

AB - A quantum well (160 Å) transistor laser with a 400 μm cavity length that achieves the large 3 dB modulation bandwidth of 13.5 GHz is described. The fast base recombination (transport determined, τ BL < 10 ps) permits improvement of the carrier-photon damping ratio (>1 / √2), resulting in a resonant peak magnitude of unity and consequently a resonance frequency of ∼0 GHz (no peak) in the small-signal response. Quantum well band filling and bandwidth saturation are observed on the ground state (λ = 1000 nm), and increase with operation on the first excited state (λ = 980 nm).

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Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser

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