Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission

Tomasz J. Ochalski, Juan S.D. Morales, Shumithira Gandan, Diana L. Huffaker, Hyunseok Kim, Liam O'faolain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we experimentally study the carrier and refractive index dynamics of InGaAs nanopillar grown on a Si on insulator (SOI) substrate. The recombination process of the InGaAs NP is characterized with different optical techniques. Temperature dependent photoluminescence (PL) at 0.5mW excitation power is carried out to determine the influence of temperature on carrier dynamics. The radiative recombination lifetime has been studied at 7K from time-resolved photoluminescence (TRPL) experiments at a certain excitation power. The optimal combination of pitch (separation between NPs) and diameter in the growth process of this nanostructure has also been measured. These results will contribute to further optimization of the InGaAs nanolaser for integration of III-V optoelectronics on SOI substrates.

Original languageEnglish (US)
Title of host publicationActive Photonic Platforms XI
EditorsGanapathi S. Subramania, Stavroula Foteinopoulou
PublisherSPIE
ISBN (Electronic)9781510628557
DOIs
StatePublished - 2019
Externally publishedYes
EventActive Photonic Platforms XI Conference 2019 - San Diego, United States
Duration: Aug 11 2019Aug 15 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11081
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceActive Photonic Platforms XI Conference 2019
Country/TerritoryUnited States
CitySan Diego
Period8/11/198/15/19

Keywords

  • III-V on silicon
  • Nanolasers
  • SOI
  • Time resolved photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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