Carbon tetrachloride doped Al x Ga1-x As grown by metalorganic chemical vapor deposition

B. T. Cunningham, J. E. Baker, G. E. Stillman

Research output: Contribution to journalArticle


A dilute mixture of CCl4 in H2 has recently been shown to be a suitable carbon doping source for obtaining p-type GaAs grown by metalorganic chemical vapor deposition (MOCVD) with carbon acceptor concentrations in excess of 1 × 1019cm-3. To understand the effect of growth parameters on carbon incorporation in CCl4 doped Al x Ga1-x As, carbon acceptor concentration was studied as a function of Al composition, growth temperature, growth rate, and CCl4 flow rate using electrochemical capacitance-voltage profiling. The carbon incorporation as a function of Al composition, growth temperature and CCl4 flow rate was also measured by secondary ion mass spectroscopy (SIMS). All layers were grown by low pressure MOCVD using TMGa and TMAl as column III precursors, and 100% AsH3 as the column V source. Increased Al composition reduced the dependence of carbon concentration on the growth temperature. Reduced growth rate, which resulted in substantially decreased carbon acceptor concentrations in GaAs, had an insignificant effect on the carrier concentration of Al0.4Ga0.6As. A linear relationship between hole concentration and CC14 flow rate in AlxGa1-x As for 0.0 ≤x ≤ 0.8 was observed. These results are interpreted to indicate that adsorption and desorption of CCl y (y ≤ 3) on the Al x Ga1-x As surface during crystal growth plays an important role in the carbon incorporation mechanism.

Original languageEnglish (US)
Pages (from-to)331-335
Number of pages5
JournalJournal of Electronic Materials
Issue number4
StatePublished - Apr 1 1990


  • AlGaAs
  • carbon doping

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

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