Carbon nanotubes on partially depassivated n -doped Si (100) - (2×1): H substrates

We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room- temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si (100) - (2×1): H with hydrogen-depassivated stripes up to 100Å wide are ascertained from both experiment and theory. The results presented here point toward local functionalities of nanotube-semiconductor interfaces.