Carbon nanotubes on partially depassivated n -doped Si (100) - (2×1): H substrates

Salvador Barraza-Lopez, Peter M. Albrecht, Joseph W. Lyding

Research output: Contribution to journalArticle

Abstract

We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room- temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si (100) - (2×1): H with hydrogen-depassivated stripes up to 100Å wide are ascertained from both experiment and theory. The results presented here point toward local functionalities of nanotube-semiconductor interfaces.

Original languageEnglish (US)
Article number045415
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number4
DOIs
StatePublished - Aug 6 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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