Carbon nanotubes on partially depassivated n -doped Si (100) - (2×1)

H substrates

Salvador Barraza-Lopez, Peter M. Albrecht, Joseph W Lyding

Research output: Contribution to journalArticle

Abstract

We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room- temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si (100) - (2×1): H with hydrogen-depassivated stripes up to 100Å wide are ascertained from both experiment and theory. The results presented here point toward local functionalities of nanotube-semiconductor interfaces.

Original languageEnglish (US)
Article number045415
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number4
DOIs
StatePublished - Aug 6 2009

Fingerprint

Carbon Nanotubes
Carbon nanotubes
carbon nanotubes
Hydrogen
Ultrahigh vacuum
Silicon
Substrates
Electronic properties
Nanotubes
ultrahigh vacuum
Density functional theory
nanotubes
Microscopes
microscopes
Doping (additives)
Semiconductor materials
density functional theory
Scanning
scanning
silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Carbon nanotubes on partially depassivated n -doped Si (100) - (2×1) : H substrates. / Barraza-Lopez, Salvador; Albrecht, Peter M.; Lyding, Joseph W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 4, 045415, 06.08.2009.

Research output: Contribution to journalArticle

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AB - We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room- temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si (100) - (2×1): H with hydrogen-depassivated stripes up to 100Å wide are ascertained from both experiment and theory. The results presented here point toward local functionalities of nanotube-semiconductor interfaces.

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