Abstract
We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room- temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si (100) - (2×1): H with hydrogen-depassivated stripes up to 100Å wide are ascertained from both experiment and theory. The results presented here point toward local functionalities of nanotube-semiconductor interfaces.
| Original language | English (US) |
|---|---|
| Article number | 045415 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 80 |
| Issue number | 4 |
| DOIs | |
| State | Published - Aug 6 2009 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Carbon nanotubes on partially depassivated n -doped Si (100) - (2×1) : H substrates. / Barraza-Lopez, Salvador; Albrecht, Peter M.; Lyding, Joseph W.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 4, 045415, 06.08.2009.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Carbon nanotubes on partially depassivated n -doped Si (100) - (2×1)
T2 - H substrates
AU - Barraza-Lopez, Salvador
AU - Albrecht, Peter M.
AU - Lyding, Joseph W
PY - 2009/8/6
Y1 - 2009/8/6
N2 - We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room- temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si (100) - (2×1): H with hydrogen-depassivated stripes up to 100Å wide are ascertained from both experiment and theory. The results presented here point toward local functionalities of nanotube-semiconductor interfaces.
AB - We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room- temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si (100) - (2×1): H with hydrogen-depassivated stripes up to 100Å wide are ascertained from both experiment and theory. The results presented here point toward local functionalities of nanotube-semiconductor interfaces.
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UR - http://www.scopus.com/inward/citedby.url?scp=70049114064&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.80.045415
DO - 10.1103/PhysRevB.80.045415
M3 - Article
VL - 80
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 4
M1 - 045415
ER -