Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts

Jianshi Tang, Qing Cao, Damon B. Farmer, George Tulevski, Shu Jen Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CNT-based complementary logic using low-temperature processed end-boned metal contacts are demonstrated. This new form of end-bonded contact is made by carbon dissolution into metal contacts with high carbon solubility (e.g., Ni and Co), which requires only low annealing temperature (400-600 °C). As-fabricated end-bonded Ni contacts serve as robust p-type contacts to CNTs and perform better than standard Pd side-bonded contacts at scaled dimensions. In addition, stable NFETs are converted from PFETs using Al2O3 as an n-type physicochemical doping layer. CMOS inverters are further built with end-bonded contacts for both PFETs and NFETs, featuring the smallest contact size thus far for CNT inverters. These new findings could pave the way to realizing CNT-based scalable CMOS technology.

Original languageEnglish (US)
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5.1.1-5.1.4
ISBN (Electronic)9781509039012
DOIs
StatePublished - Jan 31 2017
Externally publishedYes
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: Dec 3 2016Dec 7 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period12/3/1612/7/16

Fingerprint

Carbon Nanotubes
logic
electric contacts
Carbon nanotubes
Carbon
Metals
carbon nanotubes
inverters
metals
CMOS
Dissolution
Solubility
Doping (additives)
Annealing
Temperature
carbon
dissolving
solubility
annealing
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Tang, J., Cao, Q., Farmer, D. B., Tulevski, G., & Han, S. J. (2017). Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 5.1.1-5.1.4). [7838350] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838350

Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts. / Tang, Jianshi; Cao, Qing; Farmer, Damon B.; Tulevski, George; Han, Shu Jen.

2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 5.1.1-5.1.4 7838350 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tang, J, Cao, Q, Farmer, DB, Tulevski, G & Han, SJ 2017, Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838350, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 5.1.1-5.1.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 12/3/16. https://doi.org/10.1109/IEDM.2016.7838350
Tang J, Cao Q, Farmer DB, Tulevski G, Han SJ. Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 5.1.1-5.1.4. 7838350. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2016.7838350
Tang, Jianshi ; Cao, Qing ; Farmer, Damon B. ; Tulevski, George ; Han, Shu Jen. / Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 5.1.1-5.1.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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