Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts

Jianshi Tang, Qing Cao, Damon B. Farmer, George Tulevski, Shu Jen Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CNT-based complementary logic using low-temperature processed end-boned metal contacts are demonstrated. This new form of end-bonded contact is made by carbon dissolution into metal contacts with high carbon solubility (e.g., Ni and Co), which requires only low annealing temperature (400-600 °C). As-fabricated end-bonded Ni contacts serve as robust p-type contacts to CNTs and perform better than standard Pd side-bonded contacts at scaled dimensions. In addition, stable NFETs are converted from PFETs using Al2O3 as an n-type physicochemical doping layer. CMOS inverters are further built with end-bonded contacts for both PFETs and NFETs, featuring the smallest contact size thus far for CNT inverters. These new findings could pave the way to realizing CNT-based scalable CMOS technology.

Original languageEnglish (US)
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5.1.1-5.1.4
ISBN (Electronic)9781509039012
DOIs
StatePublished - Jan 31 2017
Externally publishedYes
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: Dec 3 2016Dec 7 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period12/3/1612/7/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Tang, J., Cao, Q., Farmer, D. B., Tulevski, G., & Han, S. J. (2017). Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 5.1.1-5.1.4). [7838350] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838350