@inproceedings{988f0212959c41e7a9f2f1766a507a9d,
title = "Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts",
abstract = "CNT-based complementary logic using low-temperature processed end-boned metal contacts are demonstrated. This new form of end-bonded contact is made by carbon dissolution into metal contacts with high carbon solubility (e.g., Ni and Co), which requires only low annealing temperature (400-600 °C). As-fabricated end-bonded Ni contacts serve as robust p-type contacts to CNTs and perform better than standard Pd side-bonded contacts at scaled dimensions. In addition, stable NFETs are converted from PFETs using Al2O3 as an n-type physicochemical doping layer. CMOS inverters are further built with end-bonded contacts for both PFETs and NFETs, featuring the smallest contact size thus far for CNT inverters. These new findings could pave the way to realizing CNT-based scalable CMOS technology.",
author = "Jianshi Tang and Qing Cao and Farmer, {Damon B.} and George Tulevski and Han, {Shu Jen}",
year = "2017",
month = jan,
day = "31",
doi = "10.1109/IEDM.2016.7838350",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "5.1.1--5.1.4",
booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
address = "United States",
note = "62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
}