Carbon nanomaterial transistors and circuits

Scott Chilstedt, Chen Dong, Deming Chen

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Throughout much of the semiconductor industry’s history, the digital transistor maintained a familiar metal-oxide-semiconductor (MOS) structure using a polycrystalline silicon gate, a silicon dioxide insulator, and a single crystal silicon channel. However, continued technology scaling brings a number of new design issues, and alternative structures are becoming advantageous. Recently, high-K dielectrics and metal gates have seen widespread adoption to combat rising leakage power consumption. To keep scaling in the future, alternatives to the conventional silicon channel must also be considered. In this chapter, we describe a new class of transistors whose channels are made from semiconducting carbon nanomaterials. These nanomaterials come in two forms: carbon nanotubes (CNTs), and graphene nanoribbons (GNRs). The research community has given specific attention to these two carbon allotropes because of their outstanding electrical properties, including high mobilities at room temperature, high current densities, and micronscale mean free paths. There are many possible transistor designs involving CNTs and GNRs, and each offers a unique set of benefits. They also face a number of challenges. This chapter covers the evolution of these designs, and highlights the works that have driven their development. In order to be useful to the semiconductor industry, transistors must be connected together to form higher order circuits. Therefore, state of the art carbon nanomaterial modeling techniques are reviewed, and their application towards nanoscale VLSI circuit evaluation is discussed. We also introduce logic gates and small scale circuit structures that use these nanomaterial transistors. Throughout the chapter, an emphasis is placed on identifying the opportunities and challenges involved in the adoption of carbon nanomaterial transistors.

Original languageEnglish (US)
Title of host publicationTransistors
Subtitle of host publicationTypes, Materials and Applications
PublisherNova Science Publishers, Inc.
Pages1-34
Number of pages34
ISBN (Electronic)9781617280740
ISBN (Print)9781616689087
StatePublished - Jan 1 2010

Fingerprint

transistors
carbon
graphene
silicon
carbon nanotubes
scaling
combat
very large scale integration
metal oxide semiconductors
mean free path
logic
high current
leakage
industries
electrical properties
insulators
histories
current density
silicon dioxide
evaluation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chilstedt, S., Dong, C., & Chen, D. (2010). Carbon nanomaterial transistors and circuits. In Transistors: Types, Materials and Applications (pp. 1-34). Nova Science Publishers, Inc..

Carbon nanomaterial transistors and circuits. / Chilstedt, Scott; Dong, Chen; Chen, Deming.

Transistors: Types, Materials and Applications. Nova Science Publishers, Inc., 2010. p. 1-34.

Research output: Chapter in Book/Report/Conference proceedingChapter

Chilstedt, S, Dong, C & Chen, D 2010, Carbon nanomaterial transistors and circuits. in Transistors: Types, Materials and Applications. Nova Science Publishers, Inc., pp. 1-34.
Chilstedt S, Dong C, Chen D. Carbon nanomaterial transistors and circuits. In Transistors: Types, Materials and Applications. Nova Science Publishers, Inc. 2010. p. 1-34
Chilstedt, Scott ; Dong, Chen ; Chen, Deming. / Carbon nanomaterial transistors and circuits. Transistors: Types, Materials and Applications. Nova Science Publishers, Inc., 2010. pp. 1-34
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