Abstract
A stack design for carbon-doped GaAs single junction solar microcells grown in triple-layer epitaxial assemblies is presented. As-grown materials exhibit improved uniformity of photovoltaic performance compared to zinc-doped systems due to the lack of mobile dopants while a slight degradation exists in middle and bottom devices. Detailed electrical and optical characterizations of devices together with systematic studies of acceptor reactivation reveal carbon-related defects accompanied by carrier compensation, and associated scattering and recombination centers are primarily responsible for the degraded contact properties and photovoltaic performance, resulting from prolonged thermal treatments of early-grown materials during the multilayer epitaxial growth.
Original language | English (US) |
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Article number | 253902 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 25 |
DOIs | |
State | Published - Jun 24 2013 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)