Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers

M. B. Stone, K. C. Ku, S. J. Potashnik, B. L. Sheu, N. Samarth, P. Schiffer

Research output: Contribution to journalArticle

Abstract

The effects of annealing on Ga1-xMnxAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses TC in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.

Original languageEnglish (US)
Pages (from-to)4568-4570
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number22
DOIs
StatePublished - Dec 1 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Capping-induced suppression of annealing effects on Ga<sub>1-x</sub>Mn<sub>x</sub>As epilayers'. Together they form a unique fingerprint.

  • Cite this

    Stone, M. B., Ku, K. C., Potashnik, S. J., Sheu, B. L., Samarth, N., & Schiffer, P. (2003). Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers. Applied Physics Letters, 83(22), 4568-4570. https://doi.org/10.1063/1.1629376