Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers

M. B. Stone; K. C. Ku; S. J. Potashnik; B. L. Sheu; N. Samarth; P. Schiffer

doi:10.1063/1.1629376

Capping-induced suppression of annealing effects on Ga_1-xMn_xAs epilayers

M. B. Stone, K. C. Ku, S. J. Potashnik, B. L. Sheu, N. Samarth, P. Schiffer

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of annealing on Ga_1-xMn_xAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses T_C in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.

Original language	English (US)
Pages (from-to)	4568-4570
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1629376
State	Published - Dec 1 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.1629376

Library availability

Discover UIUC Full Text

Cite this

@article{7d6fb04ea17740aeb75c0c0db7ea79f5,

title = "Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers",

abstract = "The effects of annealing on Ga1-xMnxAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses TC in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.",

author = "Stone, {M. B.} and Ku, {K. C.} and Potashnik, {S. J.} and Sheu, {B. L.} and N. Samarth and P. Schiffer",

year = "2003",

month = dec,

day = "1",

doi = "10.1063/1.1629376",

language = "English (US)",

volume = "83",

pages = "4568--4570",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers

AU - Stone, M. B.

AU - Ku, K. C.

AU - Potashnik, S. J.

AU - Sheu, B. L.

AU - Samarth, N.

AU - Schiffer, P.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The effects of annealing on Ga1-xMnxAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses TC in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.

AB - The effects of annealing on Ga1-xMnxAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses TC in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.

UR - http://www.scopus.com/inward/record.url?scp=0346846591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346846591&partnerID=8YFLogxK

U2 - 10.1063/1.1629376

DO - 10.1063/1.1629376

M3 - Article

AN - SCOPUS:0346846591

SN - 0003-6951

VL - 83

SP - 4568

EP - 4570

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -