Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs

A. Godoy, F. Ruiz, C. Sampedro, F. Gámiz, U. Ravaioli

Research output: Contribution to journalArticlepeer-review

Abstract

The continuous reduction of device dimensions and the design of new silicon-on-insulator (SOI) structures which confine the carriers in two dimensions (2D) have a considerable influence on electron transport properties. The aim of this work is to study the phonon-limited electron mobility in silicon nanowires where the carriers are confined in 2D and we are dealing with a 1D electron gas. It has been found that for devices with silicon cross-sections below 10 nm, the overlap factor rapidly increases, producing a notable degradation of the phonon-limited mobility.

Original languageEnglish (US)
Pages (from-to)1211-1215
Number of pages5
JournalSolid-State Electronics
Volume51
Issue number9
DOIs
StatePublished - Sep 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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