Calculation of the high energy tail of the electron distribution in Si-MOSFETs with an evolutionary algorithm

J. Jakumeit, A. Duncan, U. Ravaioli, K. Hess

Research output: Contribution to journalArticlepeer-review

Abstract

An Evolutionary Algorithm (EA) is used to search for electron distributions which fit a given goal, for example a measured substrate current. The search of the EA is directed toward physically correct distributions by help of a Monte Carlo like physical mutation operator. In this way the EA can calculate backwards electron distributions from measurement results. Results for an 800 nm and a 75 nm MOSFET demonstrate that the backward calculation ability of the EA allows the use of less complex and less computationally expensive models in the Monte Carlo like physical mutation and still gives electron distributions which are comparable to full-band Monte Carlo results.

Original languageEnglish (US)
Pages (from-to)517-520
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume204
Issue number1
DOIs
StatePublished - Nov 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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