## Abstract

A new approach to simulate electronic transport at high energies in silicon is introduced, which is based on a mixture of evolutionary optimization algorithms and the Monte Carlo technique. The optimization technique of the evolutionary algorithm is used to find electron distributions which are in agreement with a given physical quantity, for example, a measured substrate current. In this way, the evolutionary algorithm can calculate backward the electron distributions from results of measurements. A mutation operator, which is based on the Monte Carlo technique, is used to direct the optimization of the evolutionary algorithm toward physically correct distributions. A comparison of the results of this new approach with electron distributions calculated by a full band Monte Carlo program demonstrates both the backward calculation ability of the evolutionary algorithm and the correctness of the physical model in the Monte Carlo-like mutation operator. It becomes obvious that the electron distribution in silicon is mainly determined by the scattering rates. By suppressing the optimization of the evolutionary algorithm the Monte Carlo-like mutation operator alone was found 10 provide a powerful new type of Monte Carlo technique. While these methods are not as precise as a full band Monte Carlo approach, they are shown to be numerically efficient and give also a good fit to reliability related bol electron effects.

Original language | English (US) |
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Pages (from-to) | 5061-5066 |

Number of pages | 6 |

Journal | Journal of Applied Physics |

Volume | 80 |

Issue number | 9 |

DOIs | |

State | Published - Nov 1 1996 |

## ASJC Scopus subject areas

- Physics and Astronomy(all)