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Calculation of electron density in planar-doped high electron mobility transistors
M. B. Patil,
U. Ravaioli
Coordinated Science Lab
Electrical and Computer Engineering
Micro and Nanotechnology Lab
Grainger College of Engineering
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peer-review
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Dive into the research topics of 'Calculation of electron density in planar-doped high electron mobility transistors'. Together they form a unique fingerprint.
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Keyphrases
Doped Layers
100%
High Electron Mobility Transistor
100%
Electron Density
100%
Spacer Thickness
100%
Doping Density
100%
V-shaped Quantum Well
100%
Quantum Well
50%
Poisson Equation
50%
Device Performance
50%
Schrödinger Equation
50%
Practical Devices
50%
One Dimension
50%
High Electron Mobility
50%
Double Heterojunction
50%
Heterojunction Structure
50%
Convergence Factor
50%
Material Science
Transistor
100%
Carrier Concentration
100%
Quantum Well
100%
Electron Mobility
100%
Density
66%
Heterojunction Structure
33%
Physics
Quantum Wells
100%
Electron Density
100%
High Electron Mobility Transistors
100%
Poisson Equation
33%
Heterojunctions
33%
Electron Mobility
33%
Engineering
Quantum Well
100%
Doped Layer
66%
Doping Density
66%
Heterojunctions
33%
Device Performance
33%
Schr Dinger Equation
33%
Electron Channel
33%