Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor

D. G. Deppe; W. E. Plano; J. M. Dallesasse; D. C. Hall; L. J. Guido; N. Holonyak

doi:10.1063/1.99296

Buried heterostructure Al_xGa_1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor

D. G. Deppe, W. E. Plano, J. M. Dallesasse, D. C. Hall, L. J. Guido, N. Holonyak

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented on a method to diffuse Ge into quantum well Al _xGa_1-xAs-GaAs crystals from a vapor source, thus effecting impurity-induced layer disordering, and shift from lower to higher gap. The Ge diffusion is characterized on undoped GaAs by using secondary ion mass spectroscopy and capacitance-voltage electrochemical profiling. The layer disordering with Ge is used to fabricate 5-μm-wide buried heterostructure quantum well lasers (250 μm long) with continuous wave thresholds as low as 7 mA and output powers of greater than 90 mW (both facets).

Original language	English (US)
Pages (from-to)	825-827
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	10
DOIs	https://doi.org/10.1063/1.99296
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.99296

Library availability

Discover UIUC Full Text

Cite this

@article{88ac3a7e5cab46a592ca6c7b1348ef58,

title = "Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor",

abstract = "Data are presented on a method to diffuse Ge into quantum well Al xGa1-xAs-GaAs crystals from a vapor source, thus effecting impurity-induced layer disordering, and shift from lower to higher gap. The Ge diffusion is characterized on undoped GaAs by using secondary ion mass spectroscopy and capacitance-voltage electrochemical profiling. The layer disordering with Ge is used to fabricate 5-μm-wide buried heterostructure quantum well lasers (250 μm long) with continuous wave thresholds as low as 7 mA and output powers of greater than 90 mW (both facets).",

author = "Deppe, {D. G.} and Plano, {W. E.} and Dallesasse, {J. M.} and Hall, {D. C.} and Guido, {L. J.} and N. Holonyak",

year = "1988",

doi = "10.1063/1.99296",

language = "English (US)",

volume = "52",

pages = "825--827",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor

AU - Deppe, D. G.

AU - Plano, W. E.

AU - Dallesasse, J. M.

AU - Hall, D. C.

AU - Guido, L. J.

AU - Holonyak, N.

PY - 1988

Y1 - 1988

N2 - Data are presented on a method to diffuse Ge into quantum well Al xGa1-xAs-GaAs crystals from a vapor source, thus effecting impurity-induced layer disordering, and shift from lower to higher gap. The Ge diffusion is characterized on undoped GaAs by using secondary ion mass spectroscopy and capacitance-voltage electrochemical profiling. The layer disordering with Ge is used to fabricate 5-μm-wide buried heterostructure quantum well lasers (250 μm long) with continuous wave thresholds as low as 7 mA and output powers of greater than 90 mW (both facets).

AB - Data are presented on a method to diffuse Ge into quantum well Al xGa1-xAs-GaAs crystals from a vapor source, thus effecting impurity-induced layer disordering, and shift from lower to higher gap. The Ge diffusion is characterized on undoped GaAs by using secondary ion mass spectroscopy and capacitance-voltage electrochemical profiling. The layer disordering with Ge is used to fabricate 5-μm-wide buried heterostructure quantum well lasers (250 μm long) with continuous wave thresholds as low as 7 mA and output powers of greater than 90 mW (both facets).

UR - http://www.scopus.com/inward/record.url?scp=36549096447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549096447&partnerID=8YFLogxK

U2 - 10.1063/1.99296

DO - 10.1063/1.99296

M3 - Article

AN - SCOPUS:36549096447

SN - 0003-6951

VL - 52

SP - 825

EP - 827

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -