Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy

Jinman Yang, Trevor J. Thornton, Stephen M. Goodnick, Michael Kozicki, Joseph W Lyding

Research output: Contribution to journalArticle

Abstract

Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage, reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope.

Original languageEnglish (US)
Pages (from-to)354-357
Number of pages4
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 1 2002

Fingerprint

Hot carriers
Electron spectroscopy
Hot electrons
Silicon
hot electrons
electron spectroscopy
field effect transistors
insulators
silicon
degradation
Inversion layers
Degradation
stress measurement
Stress measurement
Transconductance
Electric current measurement
transconductance
Threshold voltage
threshold voltage
Microscopes

Keywords

  • Device modeling
  • Electron transport
  • SOI MOSFETs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy. / Yang, Jinman; Thornton, Trevor J.; Goodnick, Stephen M.; Kozicki, Michael; Lyding, Joseph W.

In: Physica B: Condensed Matter, Vol. 314, No. 1-4, 01.03.2002, p. 354-357.

Research output: Contribution to journalArticle

Yang, Jinman ; Thornton, Trevor J. ; Goodnick, Stephen M. ; Kozicki, Michael ; Lyding, Joseph W. / Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy. In: Physica B: Condensed Matter. 2002 ; Vol. 314, No. 1-4. pp. 354-357.
@article{950a8a67f777403abe2641ce7790937f,
title = "Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy",
abstract = "Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage, reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope.",
keywords = "Device modeling, Electron transport, SOI MOSFETs",
author = "Jinman Yang and Thornton, {Trevor J.} and Goodnick, {Stephen M.} and Michael Kozicki and Lyding, {Joseph W}",
year = "2002",
month = "3",
day = "1",
doi = "10.1016/S0921-4526(01)01404-1",
language = "English (US)",
volume = "314",
pages = "354--357",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy

AU - Yang, Jinman

AU - Thornton, Trevor J.

AU - Goodnick, Stephen M.

AU - Kozicki, Michael

AU - Lyding, Joseph W

PY - 2002/3/1

Y1 - 2002/3/1

N2 - Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage, reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope.

AB - Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage, reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope.

KW - Device modeling

KW - Electron transport

KW - SOI MOSFETs

UR - http://www.scopus.com/inward/record.url?scp=0036503450&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036503450&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)01404-1

DO - 10.1016/S0921-4526(01)01404-1

M3 - Article

AN - SCOPUS:0036503450

VL - 314

SP - 354

EP - 357

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -