Buffer layer strain transfer in AlN/GaN near critical thickness

Chinkyo Kim, I. K. Robinson, Jaemin Myoung, Kyu Hwan Shim, Kyekyoon Kim

Research output: Contribution to journalArticlepeer-review

Abstract

X-ray diffraction has been employed to investigate the strain relaxation of both components of a GaN/AlN bilayer on sapphire (0001) as a function of the GaN layer thickness. Below a critical thickness, GaN and AlN both relax with the same in-plane lattice constant, consistent with the energy minimum condition of elasticity theory for a bilayer. Above the critical thickness, however, the strain relaxations in the two layers were different. We can fit this strain relaxation behavior with a free standing bilayer model with an additional term describing the interaction of dislocations.

Original languageEnglish (US)
Pages (from-to)4040-4044
Number of pages5
JournalJournal of Applied Physics
Volume85
Issue number8
DOIs
StatePublished - Apr 15 1999

Keywords

  • ALUMINIUM NITRIDES
  • DISLOCATIONS
  • ELASTICITY
  • GALLIUM NITRIDES
  • LATTICE PARAMETERS
  • STRAINS
  • THICKNESS
  • X-RAY DIFFRACTION

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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