Broadband transistor-injected dual doping quantum cascade laser

Zhiyuan Lin, Zhuoran Wang, Guohui Yuan, Jean Pierre Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

A novel design-friendly device called the transistor-injected dual doping quantum cascade laser (TI-D2QCL) with two different dopings in each stack of a homogeneous superlattice is proposed. By adjusting the base–emitter bias Vbe of the bipolar transistor to supply electrons in the dual doping regions, charge quasi-neutrality can be achieved to generate different optical transitions in each cascading superlattice stack. These transitions are then stacked and amplified to contribute to a broad flat gain spectrum. Model calculations of a designed TI-D2QCL show that a broad flat gain spectrum ranging from 9.41 µm to 12.01 µm with a relative bandwidth of 0.24 can be obtained, indicating that the TI-D2QCL with dual doping pattern may open a new pathway to the appealing applications in both mid-infrared and terahertz frequency ranges, from wideband optical generations to advanced frequency comb technologies.

Original languageEnglish (US)
Pages (from-to)2099-2103
Number of pages5
JournalJournal of the Optical Society of America B: Optical Physics
Volume38
Issue number7
DOIs
StatePublished - Jul 1 2021

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics

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