A novel design-friendly device called the transistor-injected dual doping quantum cascade laser (TI-D2QCL) with two different dopings in each stack of a homogeneous superlattice is proposed. By adjusting the base–emitter bias Vbe of the bipolar transistor to supply electrons in the dual doping regions, charge quasi-neutrality can be achieved to generate different optical transitions in each cascading superlattice stack. These transitions are then stacked and amplified to contribute to a broad flat gain spectrum. Model calculations of a designed TI-D2QCL show that a broad flat gain spectrum ranging from 9.41 µm to 12.01 µm with a relative bandwidth of 0.24 can be obtained, indicating that the TI-D2QCL with dual doping pattern may open a new pathway to the appealing applications in both mid-infrared and terahertz frequency ranges, from wideband optical generations to advanced frequency comb technologies.
|Number of pages
|Journal of the Optical Society of America B: Optical Physics
|Published - Jul 1 2021
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Atomic and Molecular Physics, and Optics