Broadband low actuation voltage RF MEM switches

S. C. Shen, D. Caruth, Milton Feng

Research output: Contribution to conferencePaperpeer-review

Abstract

We demonstrate a sub-10volts RF MEM switch built on a semi-insulating GaAs substrate. The fabrication process is a 7-mask-layer process compatible with GaAs MMIC processes. The insertion loss is less than 0.1 dB and the isolation is better than 25 dB over frequencies up to 40 GHz. The MEM switches will provide a solution as a broadband, low voltage building block for RF communication applications.

Original languageEnglish (US)
Pages161-164
Number of pages4
StatePublished - Dec 1 2000
Event2000 IEEE GaAs IC Symposium - Seattle, WA, United States
Duration: Nov 5 2000Nov 8 2000

Other

Other2000 IEEE GaAs IC Symposium
Country/TerritoryUnited States
CitySeattle, WA
Period11/5/0011/8/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Broadband low actuation voltage RF MEM switches'. Together they form a unique fingerprint.

Cite this