Abstract
We demonstrate a sub-10volts RF MEM switch built on a semi-insulating GaAs substrate. The fabrication process is a 7-mask-layer process compatible with GaAs MMIC processes. The insertion loss is less than 0.1 dB and the isolation is better than 25 dB over frequencies up to 40 GHz. The MEM switches will provide a solution as a broadband, low voltage building block for RF communication applications.
| Original language | English (US) |
|---|---|
| Pages | 161-164 |
| Number of pages | 4 |
| State | Published - 2000 |
| Event | 2000 IEEE GaAs IC Symposium - Seattle, WA, United States Duration: Nov 5 2000 → Nov 8 2000 |
Other
| Other | 2000 IEEE GaAs IC Symposium |
|---|---|
| Country/Territory | United States |
| City | Seattle, WA |
| Period | 11/5/00 → 11/8/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering