Abstract
A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 245-246 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 33 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jan 30 1997 |
Keywords
- Etching
- Gallium nitride
ASJC Scopus subject areas
- Electrical and Electronic Engineering