Abstract
A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.
Original language | English (US) |
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Pages (from-to) | 245-246 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 33 |
Issue number | 3 |
DOIs | |
State | Published - Jan 30 1997 |
Keywords
- Etching
- Gallium nitride
ASJC Scopus subject areas
- Electrical and Electronic Engineering