Broad-area photoelectrochemical etching of GaN

C. Youtsey; I. Adesida; G. Bulman

doi:10.1049/el:19970121

Broad-area photoelectrochemical etching of GaN

C. Youtsey, I. Adesida, G. Bulman

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Abstract

A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n⁺ GaN, non-intentionally doped GaN, and p-GaN samples.

Original language	English (US)
Pages (from-to)	245-246
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	3
DOIs	https://doi.org/10.1049/el:19970121
State	Published - Jan 30 1997

Keywords

Etching
Gallium nitride

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Broad-area photoelectrochemical etching of GaN",

abstract = "A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.",

keywords = "Etching, Gallium nitride",

author = "C. Youtsey and I. Adesida and G. Bulman",

year = "1997",

month = jan,

day = "30",

doi = "10.1049/el:19970121",

language = "English (US)",

volume = "33",

pages = "245--246",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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T1 - Broad-area photoelectrochemical etching of GaN

AU - Youtsey, C.

AU - Adesida, I.

AU - Bulman, G.

PY - 1997/1/30

Y1 - 1997/1/30

N2 - A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.

AB - A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.

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KW - Gallium nitride

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DO - 10.1049/el:19970121

M3 - Article

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EP - 246

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 3

ER -

Broad-area photoelectrochemical etching of GaN

Abstract

Keywords

ASJC Scopus subject areas

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