Broad-area photoelectrochemical etching of GaN

C. Youtsey, I. Adesida, G. Bulman

Research output: Contribution to journalArticlepeer-review

Abstract

A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.

Original languageEnglish (US)
Pages (from-to)245-246
Number of pages2
JournalElectronics Letters
Volume33
Issue number3
DOIs
StatePublished - Jan 30 1997

Keywords

  • Etching
  • Gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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