Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

Keyphrases

• Stress Conditions 100%
• Ultra-thin Gate Oxide 100%
• Latent Damage 100%
• Damage Rate 50%
• Degradation Rate 50%
• Pulse Width 50%
• Gate Oxide 50%
• Turnaround Time 50%
• Time Regime 50%
• Generation Rate 50%
• E-model 50%
• Time-dependent Dielectric Breakdown 50%
• Trap Generation 50%
• Time to Breakdown 50%
• Voltage Overshoot 50%
• Large Vocabulary Continuous Speech Recognition (LVCSR) 50%

Engineering

• Gate Oxide 100%
• Stress Condition 100%
• Damage Rate 33%
• Dielectrics 33%
• Nanosecond Time 33%
• Pulse Duration 33%
• Degradation Rate 33%

Mathematics

• Degradation Rate 100%