TY - JOUR
T1 - Bound states at partial dislocation defects in multipole higher-order topological insulators
AU - Yamada, Sasha S.
AU - Li, Tianhe
AU - Lin, Mao
AU - Peterson, Christopher W.
AU - Hughes, Taylor L.
AU - Bahl, Gaurav
N1 - This work was sponsored by the Multidisciplinary University Research Initiative (MURI) grant N00014-20-1-2325 and the US National Science Foundation EFRI grant EFMA-1641084. G.B. would additionally like to acknowledge support from the Office of Naval Research (ONR) Director for Research Early Career grant N00014-17-1-2209, and the Presidential Early Career Award for Scientists and Engineers. S.S.Y. would also like to acknowledge support from the US National Science Foundation Graduate Research Fellowship Program under Grant No. DGE - 1746047.
PY - 2022/12
Y1 - 2022/12
N2 - The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary since they can be hidden in the bulk energy bands, obscured by boundary artifacts of non-topological origin, or, in the case of higher-order topology, they can be gapped altogether. Recently, exotic defects of translation symmetry called partial dislocations have been proposed to trap gapless topological modes in some materials. Here we present experimental observations of partial-dislocation-induced topological modes in 2D and 3D insulators. We particularly focus on multipole higher-order topological insulators built from circuit-based resonator arrays, since crucially they are not sensitive to full dislocation defects, and they have a sublattice structure allowing for stacking faults and partial dislocations.
AB - The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary since they can be hidden in the bulk energy bands, obscured by boundary artifacts of non-topological origin, or, in the case of higher-order topology, they can be gapped altogether. Recently, exotic defects of translation symmetry called partial dislocations have been proposed to trap gapless topological modes in some materials. Here we present experimental observations of partial-dislocation-induced topological modes in 2D and 3D insulators. We particularly focus on multipole higher-order topological insulators built from circuit-based resonator arrays, since crucially they are not sensitive to full dislocation defects, and they have a sublattice structure allowing for stacking faults and partial dislocations.
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U2 - 10.1038/s41467-022-29785-5
DO - 10.1038/s41467-022-29785-5
M3 - Article
C2 - 35440648
AN - SCOPUS:85128421291
SN - 2041-1723
VL - 13
JO - Nature communications
JF - Nature communications
IS - 1
M1 - 2035
ER -