Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding

Kent D. Choquette; B. Roberds; K. M. Geib; H. Q. Hou; R. D. Twesten; K. L. Lear; B. E. Hammons

Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding

Kent D. Choquette, B. Roberds, K. M. Geib, H. Q. Hou, R. D. Twesten, K. L. Lear, B. E. Hammons

Research output: Contribution to journal › Conference article › peer-review

Abstract

Bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSEL) are wafer-bonded to AlGaAs substrates employing a simple low-temperature wafer bonding process that uses inert N₂ gas during the bonding anneal rather than H₂. The wafer bonding is accomplished at 400 °C in an atmosphere of dry N₂ for 2 hours with the wafers held in compression during annealing. Intimate atomic bonding is achieved with a disordered interface region approximately 3-5 monolayers thick but without evidence of an oxide layer. The threshold current is lower for the top-emitting VCSEL, due to the mirror loss as a result of higher mirror reflectivity from the top of the semiconductor air interface.

Original language	English (US)
Pages (from-to)	34-35
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - Dec 1 1997
Externally published	Yes
Event	Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA Duration: Nov 10 1997 → Nov 13 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{8b8a549b987a4f86aaca52294fb914e9,

title = "Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding",

abstract = "Bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSEL) are wafer-bonded to AlGaAs substrates employing a simple low-temperature wafer bonding process that uses inert N2 gas during the bonding anneal rather than H2. The wafer bonding is accomplished at 400 °C in an atmosphere of dry N2 for 2 hours with the wafers held in compression during annealing. Intimate atomic bonding is achieved with a disordered interface region approximately 3-5 monolayers thick but without evidence of an oxide layer. The threshold current is lower for the top-emitting VCSEL, due to the mirror loss as a result of higher mirror reflectivity from the top of the semiconductor air interface.",

author = "Choquette, {Kent D.} and B. Roberds and Geib, {K. M.} and Hou, {H. Q.} and Twesten, {R. D.} and Lear, {K. L.} and Hammons, {B. E.}",

year = "1997",

month = dec,

day = "1",

language = "English (US)",

volume = "2",

pages = "34--35",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) ; Conference date: 10-11-1997 Through 13-11-1997",

}

TY - JOUR

T1 - Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding

AU - Choquette, Kent D.

AU - Roberds, B.

AU - Geib, K. M.

AU - Hou, H. Q.

AU - Twesten, R. D.

AU - Lear, K. L.

AU - Hammons, B. E.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSEL) are wafer-bonded to AlGaAs substrates employing a simple low-temperature wafer bonding process that uses inert N2 gas during the bonding anneal rather than H2. The wafer bonding is accomplished at 400 °C in an atmosphere of dry N2 for 2 hours with the wafers held in compression during annealing. Intimate atomic bonding is achieved with a disordered interface region approximately 3-5 monolayers thick but without evidence of an oxide layer. The threshold current is lower for the top-emitting VCSEL, due to the mirror loss as a result of higher mirror reflectivity from the top of the semiconductor air interface.

AB - Bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSEL) are wafer-bonded to AlGaAs substrates employing a simple low-temperature wafer bonding process that uses inert N2 gas during the bonding anneal rather than H2. The wafer bonding is accomplished at 400 °C in an atmosphere of dry N2 for 2 hours with the wafers held in compression during annealing. Intimate atomic bonding is achieved with a disordered interface region approximately 3-5 monolayers thick but without evidence of an oxide layer. The threshold current is lower for the top-emitting VCSEL, due to the mirror loss as a result of higher mirror reflectivity from the top of the semiconductor air interface.

UR - http://www.scopus.com/inward/record.url?scp=0031343282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031343282&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031343282

VL - 2

SP - 34

EP - 35

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SN - 1092-8081

T2 - Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2)

Y2 - 10 November 1997 through 13 November 1997

ER -

Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding

Abstract

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