Abstract
Bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSEL) are wafer-bonded to AlGaAs substrates employing a simple low-temperature wafer bonding process that uses inert N2 gas during the bonding anneal rather than H2. The wafer bonding is accomplished at 400 °C in an atmosphere of dry N2 for 2 hours with the wafers held in compression during annealing. Intimate atomic bonding is achieved with a disordered interface region approximately 3-5 monolayers thick but without evidence of an oxide layer. The threshold current is lower for the top-emitting VCSEL, due to the mirror loss as a result of higher mirror reflectivity from the top of the semiconductor air interface.
Original language | English (US) |
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Pages (from-to) | 34-35 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 2 |
State | Published - Dec 1 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA Duration: Nov 10 1997 → Nov 13 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering