Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding

Kent D. Choquette, B. Roberds, K. M. Geib, H. Q. Hou, R. D. Twesten, K. L. Lear, B. E. Hammons

Research output: Contribution to journalConference articlepeer-review

Abstract

Bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSEL) are wafer-bonded to AlGaAs substrates employing a simple low-temperature wafer bonding process that uses inert N2 gas during the bonding anneal rather than H2. The wafer bonding is accomplished at 400 °C in an atmosphere of dry N2 for 2 hours with the wafers held in compression during annealing. Intimate atomic bonding is achieved with a disordered interface region approximately 3-5 monolayers thick but without evidence of an oxide layer. The threshold current is lower for the top-emitting VCSEL, due to the mirror loss as a result of higher mirror reflectivity from the top of the semiconductor air interface.

Original languageEnglish (US)
Pages (from-to)34-35
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
StatePublished - Dec 1 1997
Externally publishedYes
EventProceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA
Duration: Nov 10 1997Nov 13 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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