Boron doped A-SI, C: H grown by reactive magnetron sputtering from doped targets

Y. H. Liang, S. Y. Yang, A. Nuruddin, John R Abelson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have deposited p+ a-Si, C: H films by reactive magnetron sputtering from boron doped target with 1 at.% B. We have investigated the influence of H2 pressure on the electrical and microstructural properties of the doped a-Si, C: H films. The boron concentration in the film is ∼2-4×1020cm-3. The incorporation of B atoms decreases by a factor of 2 at the highest H2 pressure. We have obtained films of Tauc bandgap ∼1.8-1.84eV with dark conductivity 2-8×10--1cm-1, thermal activation energy ∼0.28-0.33eV and ημτe ∼1-3×10- 8cm2/V. This result is comparable with glow discharge B doped a-Si, C: H film. We discuss the film microstructure, as reflected in infra-red & thermal H evolution spectra, vs. the absolute composition of sputtered boron doped a-Si, C: H films.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology - 1994
Pages589-594
Number of pages6
StatePublished - Dec 1 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 4 1994Apr 8 1994

Publication series

NameMaterials Research Society Symposium Proceedings
Volume336
ISSN (Print)0272-9172

Other

Other1994 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/4/944/8/94

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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