@inproceedings{2ae89a0f25334adabef5d539b8513132,
title = "Boron doped A-SI, C: H grown by reactive magnetron sputtering from doped targets",
abstract = "We have deposited p+ a-Si, C: H films by reactive magnetron sputtering from boron doped target with 1 at.% B. We have investigated the influence of H2 pressure on the electrical and microstructural properties of the doped a-Si, C: H films. The boron concentration in the film is ∼2-4×1020cm-3. The incorporation of B atoms decreases by a factor of 2 at the highest H2 pressure. We have obtained films of Tauc bandgap ∼1.8-1.84eV with dark conductivity 2-8×10-6ω-1cm-1, thermal activation energy ∼0.28-0.33eV and ημτe ∼1-3×10- 8cm2/V. This result is comparable with glow discharge B doped a-Si, C: H film. We discuss the film microstructure, as reflected in infra-red & thermal H evolution spectra, vs. the absolute composition of sputtered boron doped a-Si, C: H films.",
author = "Liang, {Y. H.} and Yang, {S. Y.} and A. Nuruddin and Abelson, {John R}",
year = "1994",
doi = "10.1557/proc-336-589",
language = "English (US)",
isbn = "1558992367",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "589--594",
booktitle = "Amorphous Silicon Technology - 1994",
note = "1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",
}