Abstract
Carrier injection across a tunnel homojunction is suggested as a new mechanism for a high-speed three-terminal device. The novel feature is the two-dimensional homojunction tunneling within a bipolar modulation doping structure. Negative differential resistance characterized by large peak-to-valley current ratios and high transconductance is anticipated. Estimates of the relevant time constants of the tunnel structure suggest the possibility of very high frequency operation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1608-1610 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 52 |
| Issue number | 19 |
| DOIs | |
| State | Published - 1988 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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