Bipolar tunneling field-effect transistor: A three-terminal negative differential resistance device for high-speed applications

J. P. Leburton, J. Kolodzey, S. Briggs

Research output: Contribution to journalArticlepeer-review

Abstract

Carrier injection across a tunnel homojunction is suggested as a new mechanism for a high-speed three-terminal device. The novel feature is the two-dimensional homojunction tunneling within a bipolar modulation doping structure. Negative differential resistance characterized by large peak-to-valley current ratios and high transconductance is anticipated. Estimates of the relevant time constants of the tunnel structure suggest the possibility of very high frequency operation.

Original languageEnglish (US)
Pages (from-to)1608-1610
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number19
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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