Bipolar leakage modeling for switch-level simulators

Rouwaida Kanj, Elyse Rosenbaum, Timothy Lehner

Research output: Contribution to conferencePaper

Abstract

An exact bipolar leakage modeling approach for approximate switch-level simulators was presented. The approach considered arbitrary signals and capacitive transients and was therefore complete. A simplification of the exact modeling approach which applies to source voltage signals was also presented.

Original languageEnglish (US)
Pages147-149
Number of pages3
StatePublished - Jan 1 2002
EventIEEE International SOI Conference - Williamsburg, VA, United States
Duration: Oct 7 2002Oct 10 2002

Other

OtherIEEE International SOI Conference
CountryUnited States
CityWilliamsburg, VA
Period10/7/0210/10/02

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kanj, R., Rosenbaum, E., & Lehner, T. (2002). Bipolar leakage modeling for switch-level simulators. 147-149. Paper presented at IEEE International SOI Conference, Williamsburg, VA, United States.