Bilayer organic-inorganic gate dielectrics for high-performance, low-voltage, single-walled carbon nanotube thin-film transistors, complementary logic gates, and p-n diodes on plastic substrates

Qing Cao, Ming Gang Xia, Moonsub Shim, John A. Rogers

Research output: Contribution to journalArticle

Abstract

High-capacitance bilayer dielectrics based on atomic-layer-deposited HfO2 and spin-cast epoxy are used with networks of single-walled carbon nanotubes (SWNTs) to enable low-voltage, hysteresis-free, and high-performance thin-film transistors (TFTs) on silicon and flexible plastic substrates. These HfO2-epoxy dielectrics exhibit excellent properties including mechanical flexibility, large capacitance (up to ca. 330 nF cm -2), and low leakage current (ca. 10-8 A cm-2); their low-temperature (ca. 150°C) deposition makes them compatible with a range of plastic substrates. Analysis and measurements of these dielectrics as gate insulators in SWNT TFTs illustrate several attractive characteristics for this application. Their compatibility with polymers used for charge-transfer doping of SWNTs is also demonstrated through the fabrication of n-channel SWNT TFTs, low-voltage p-n diodes, and complementary logic gates.

Original languageEnglish (US)
Pages (from-to)2355-2362
Number of pages8
JournalAdvanced Functional Materials
Volume16
Issue number18
DOIs
StatePublished - Dec 4 2006

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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