Bilayer organic-inorganic gate dielectrics for high-performance, low-voltage, single-walled carbon nanotube thin-film transistors, complementary logic gates, and p-n diodes on plastic substrates

Qing Cao, Ming Gang Xia, Moonsub Shim, John A. Rogers

Research output: Contribution to journalArticle

Abstract

High-capacitance bilayer dielectrics based on atomic-layer-deposited HfO2 and spin-cast epoxy are used with networks of single-walled carbon nanotubes (SWNTs) to enable low-voltage, hysteresis-free, and high-performance thin-film transistors (TFTs) on silicon and flexible plastic substrates. These HfO2-epoxy dielectrics exhibit excellent properties including mechanical flexibility, large capacitance (up to ca. 330 nF cm -2), and low leakage current (ca. 10-8 A cm-2); their low-temperature (ca. 150°C) deposition makes them compatible with a range of plastic substrates. Analysis and measurements of these dielectrics as gate insulators in SWNT TFTs illustrate several attractive characteristics for this application. Their compatibility with polymers used for charge-transfer doping of SWNTs is also demonstrated through the fabrication of n-channel SWNT TFTs, low-voltage p-n diodes, and complementary logic gates.

Original languageEnglish (US)
Pages (from-to)2355-2362
Number of pages8
JournalAdvanced Functional Materials
Volume16
Issue number18
DOIs
StatePublished - Dec 4 2006

Fingerprint

Logic gates
Gate dielectrics
Single-walled carbon nanotubes (SWCN)
Thin film transistors
low voltage
logic
Diodes
transistors
plastics
carbon nanotubes
diodes
Plastics
Electric potential
Substrates
thin films
Capacitance
capacitance
Silicon
Leakage currents
compatibility

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

@article{d8da470b04794c02b760228a141a134f,
title = "Bilayer organic-inorganic gate dielectrics for high-performance, low-voltage, single-walled carbon nanotube thin-film transistors, complementary logic gates, and p-n diodes on plastic substrates",
abstract = "High-capacitance bilayer dielectrics based on atomic-layer-deposited HfO2 and spin-cast epoxy are used with networks of single-walled carbon nanotubes (SWNTs) to enable low-voltage, hysteresis-free, and high-performance thin-film transistors (TFTs) on silicon and flexible plastic substrates. These HfO2-epoxy dielectrics exhibit excellent properties including mechanical flexibility, large capacitance (up to ca. 330 nF cm -2), and low leakage current (ca. 10-8 A cm-2); their low-temperature (ca. 150°C) deposition makes them compatible with a range of plastic substrates. Analysis and measurements of these dielectrics as gate insulators in SWNT TFTs illustrate several attractive characteristics for this application. Their compatibility with polymers used for charge-transfer doping of SWNTs is also demonstrated through the fabrication of n-channel SWNT TFTs, low-voltage p-n diodes, and complementary logic gates.",
author = "Qing Cao and Xia, {Ming Gang} and Moonsub Shim and Rogers, {John A.}",
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T1 - Bilayer organic-inorganic gate dielectrics for high-performance, low-voltage, single-walled carbon nanotube thin-film transistors, complementary logic gates, and p-n diodes on plastic substrates

AU - Cao, Qing

AU - Xia, Ming Gang

AU - Shim, Moonsub

AU - Rogers, John A.

PY - 2006/12/4

Y1 - 2006/12/4

N2 - High-capacitance bilayer dielectrics based on atomic-layer-deposited HfO2 and spin-cast epoxy are used with networks of single-walled carbon nanotubes (SWNTs) to enable low-voltage, hysteresis-free, and high-performance thin-film transistors (TFTs) on silicon and flexible plastic substrates. These HfO2-epoxy dielectrics exhibit excellent properties including mechanical flexibility, large capacitance (up to ca. 330 nF cm -2), and low leakage current (ca. 10-8 A cm-2); their low-temperature (ca. 150°C) deposition makes them compatible with a range of plastic substrates. Analysis and measurements of these dielectrics as gate insulators in SWNT TFTs illustrate several attractive characteristics for this application. Their compatibility with polymers used for charge-transfer doping of SWNTs is also demonstrated through the fabrication of n-channel SWNT TFTs, low-voltage p-n diodes, and complementary logic gates.

AB - High-capacitance bilayer dielectrics based on atomic-layer-deposited HfO2 and spin-cast epoxy are used with networks of single-walled carbon nanotubes (SWNTs) to enable low-voltage, hysteresis-free, and high-performance thin-film transistors (TFTs) on silicon and flexible plastic substrates. These HfO2-epoxy dielectrics exhibit excellent properties including mechanical flexibility, large capacitance (up to ca. 330 nF cm -2), and low leakage current (ca. 10-8 A cm-2); their low-temperature (ca. 150°C) deposition makes them compatible with a range of plastic substrates. Analysis and measurements of these dielectrics as gate insulators in SWNT TFTs illustrate several attractive characteristics for this application. Their compatibility with polymers used for charge-transfer doping of SWNTs is also demonstrated through the fabrication of n-channel SWNT TFTs, low-voltage p-n diodes, and complementary logic gates.

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