Abstract
Rapid thermal processing (RTP) has found continually increasing use for oxidation, silicidation, CVD, and other steps in microelectronic fabrication. Kinetic effects in rapid thermal processing (RTP) are often assessed using the concept of thermal budget, with the idea that low thermal budgets should minimize dopant diffusion and interface degradation. Some definitions of budget employ the product of temperature and time (T-t). In previous work, we have shown that this definition for budget often leads to qualitatively incorrect conclusions regarding heating program design. However, other definitions of budget employ the product of diffusivity and time (D-t), where the diffusivity describes unwanted diffusion or interface degradation. Here we show that minimization of D-t by itself is insufficient to kinetically optimize a heating program; account must be taken of the relative rates of the desired and undesired phenomena. We present a straightforward but rigorous method for doing so.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 57-62 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 525 |
| DOIs | |
| State | Published - 1998 |
| Event | Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 15 1998 → Apr 16 1998 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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