Benzocyclobutene (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors

Dufei Wu, Xin Yu, Yu Ting Peng, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The RIE dry etching of Benzocyclobutene are studied to develop a compatible process for high-speed VCSEL and PD fabrications. SF6, O2 and N2 are selected as the process gases with their functions in the dry etching process explained. Optimal gas ratio of SF6 to O2 is 1:4. Controlled experiments are performed to identify the optimal power and pressure configurations for a new RIE system. The main problem is pointed out to be excessive physical sputtering from experiments. A clean etching recipe is finally developed to produce ideal etching results.

Original languageEnglish (US)
Title of host publicationCS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
PublisherCS Mantech
Pages185-188
Number of pages4
ISBN (Electronic)9781893580312
StatePublished - 2021
Event35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 - Orlando, Virtual, United States
Duration: May 24 2021May 27 2021

Publication series

NameCS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
Country/TerritoryUnited States
CityOrlando, Virtual
Period5/24/215/27/21

Keywords

  • Benzocyclobutene
  • Reactive Ion Etching

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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