Abstract
Micro/nanowires of GaAs with integrated ohmic contacts have been prepared from bulk wafers by metal deposition and patterning, high-temperature annealing, and anisotropic chemical etching. These wires provide a unique type of material for high-performance devices that can be built directly on a wide range of unusual device substrates, such as plastic or paper. In particular, transfer printing organized arrays of these wires at low temperatures onto plastic substrates yield high-quality bendable metal-semiconductor field-effect transistors. Electrical and mechanical characterization of devices on poly(ethylene terephthalate) illustrates the level of performance that can be achieved. These results indicate promise for this approach to high-speed flexible circuits for emerging applications in consumer and military electronic systems.
Original language | English (US) |
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Article number | 083501 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 8 |
DOIs | |
State | Published - Aug 22 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)