Micro/nanowires of GaAs with integrated ohmic contacts have been prepared from bulk wafers by metal deposition and patterning, high-temperature annealing, and anisotropic chemical etching. These wires provide a unique type of material for high-performance devices that can be built directly on a wide range of unusual device substrates, such as plastic or paper. In particular, transfer printing organized arrays of these wires at low temperatures onto plastic substrates yield high-quality bendable metal-semiconductor field-effect transistors. Electrical and mechanical characterization of devices on poly(ethylene terephthalate) illustrates the level of performance that can be achieved. These results indicate promise for this approach to high-speed flexible circuits for emerging applications in consumer and military electronic systems.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Aug 22 2005|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)