Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors

Jonghyun Go, Pradeep R. Nair, Bobby Reddy, Brian Dorvel, Rashid Bashir, Muhammad A. Alam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electronic sensing of biomolecules is an area of immerse interest for semiconductor industry. Here we utilize the remarkable sensitivity of double-gated field-effect transistors above the fundamental Nernst limit (59mV/pH) in pH sensing to improve the sensitivity of biomolecule detection in electrolyte screening limited conditions. Our simulation results and compact models are broadly supported by various experiments and will have important implications for the design and optimization of low cost, large throughput, semiconductor based biosensors.

Original languageEnglish (US)
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages8.7.1-8.7.4
DOIs
StatePublished - Dec 1 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: Dec 6 2010Dec 8 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period12/6/1012/8/10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Go, J., Nair, P. R., Reddy, B., Dorvel, B., Bashir, R., & Alam, M. A. (2010). Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 8.7.1-8.7.4). [5703325] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703325