Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors

Jonghyun Go, Pradeep R. Nair, Bobby Reddy, Brian Dorvel, Rashid Bashir, Muhammad A. Alam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electronic sensing of biomolecules is an area of immerse interest for semiconductor industry. Here we utilize the remarkable sensitivity of double-gated field-effect transistors above the fundamental Nernst limit (59mV/pH) in pH sensing to improve the sensitivity of biomolecule detection in electrolyte screening limited conditions. Our simulation results and compact models are broadly supported by various experiments and will have important implications for the design and optimization of low cost, large throughput, semiconductor based biosensors.

Original languageEnglish (US)
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages8.7.1-8.7.4
DOIs
StatePublished - Dec 1 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: Dec 6 2010Dec 8 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period12/6/1012/8/10

Fingerprint

Biomolecules
Field effect transistors
bioinstrumentation
Biosensors
DNA
field effect transistors
deoxyribonucleic acid
Semiconductor materials
Electrolytes
Screening
sensitivity
Throughput
screening
industries
electrolytes
Costs
Industry
optimization
Experiments
electronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Go, J., Nair, P. R., Reddy, B., Dorvel, B., Bashir, R., & Alam, M. A. (2010). Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 8.7.1-8.7.4). [5703325] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703325

Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors. / Go, Jonghyun; Nair, Pradeep R.; Reddy, Bobby; Dorvel, Brian; Bashir, Rashid; Alam, Muhammad A.

2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 8.7.1-8.7.4 5703325 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Go, J, Nair, PR, Reddy, B, Dorvel, B, Bashir, R & Alam, MA 2010, Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703325, Technical Digest - International Electron Devices Meeting, IEDM, pp. 8.7.1-8.7.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 12/6/10. https://doi.org/10.1109/IEDM.2010.5703325
Go J, Nair PR, Reddy B, Dorvel B, Bashir R, Alam MA. Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 8.7.1-8.7.4. 5703325. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703325
Go, Jonghyun ; Nair, Pradeep R. ; Reddy, Bobby ; Dorvel, Brian ; Bashir, Rashid ; Alam, Muhammad A. / Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors. 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. pp. 8.7.1-8.7.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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