Be-implanted 1.3-μm InGaAsP avalanche photodetectors

M. Feng, J. D. Oberstar, T. H. Windhorn, L. W. Cook, G. E. Stillman, B. G. Streetman

Research output: Contribution to journalArticlepeer-review


The effect of different annealing temperatures in the 450-800°C range on the photoluminescence of Be-implanted InGaAsP has been studied. The results of these measurements indicate that the annealing temperature should be above 700°C for optimum lattice recovery. Avalanche photodetectors with leakage currents as low as 1 μA at 100 V and with gains ≳100 at 116 V have been fabricated. The quantum efficiency for these devices is about 65% throughout the 1.00-1.30-μm wavelength range.

Original languageEnglish (US)
Pages (from-to)591-593
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - 1979

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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