Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

K. Y. Cheng; H. Xu; M. E. Stuenkel; E. W. Iverson; C. C. Liao; K. W. Yang; M. Feng; K. Y. Cheng

doi:10.1063/1.3662152

Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

K. Y. Cheng, H. Xu, M. E. Stuenkel, E. W. Iverson, C. C. Liao, K. W. Yang, M. Feng, K. Y. Cheng

Electrical and Computer Engineering

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Abstract

The influence of energy band alignment on carrier transport and signal integrity is investigated on fabricated Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs. The Type-I double heterojunction bipolar transistor (DHBT) requires the use of a transition region (setback and superlattice layer) in base-collector hetero-interface to minimize the conduction band discontinuity that can cause current blocking in the collector I-V characteristics. Despite the effort, Type-I DHBT exhibits gain compression and base charge accumulation at high current injection, giving a nonlinear microwave operation. In contrast, the Type-I/II DHBT has a favorable band alignment and permits hot electron injection without impedance in both emitter-base and base-collector junctions, resulting in considerable microwave linearity improvement.

Original language	English (US)
Article number	113703
Journal	Journal of Applied Physics
Volume	110
Issue number	11
DOIs	https://doi.org/10.1063/1.3662152
State	Published - Dec 1 2011

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General Physics and Astronomy

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10.1063/1.3662152

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title = "Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors",

abstract = "The influence of energy band alignment on carrier transport and signal integrity is investigated on fabricated Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs. The Type-I double heterojunction bipolar transistor (DHBT) requires the use of a transition region (setback and superlattice layer) in base-collector hetero-interface to minimize the conduction band discontinuity that can cause current blocking in the collector I-V characteristics. Despite the effort, Type-I DHBT exhibits gain compression and base charge accumulation at high current injection, giving a nonlinear microwave operation. In contrast, the Type-I/II DHBT has a favorable band alignment and permits hot electron injection without impedance in both emitter-base and base-collector junctions, resulting in considerable microwave linearity improvement.",

author = "Cheng, {K. Y.} and H. Xu and Stuenkel, {M. E.} and Iverson, {E. W.} and Liao, {C. C.} and Yang, {K. W.} and M. Feng and Cheng, {K. Y.}",

note = "Funding Information: M. Feng is grateful for the support of the Nick Holonyak, Jr. Chair Professorship of Electrical and Computer Engineering. The authors would like to give thanks for funding support from the Defense Advanced Research Projects Agency (DARPA)-TFAST program, DARPA-UPI program, and BAE Systems as well as for the gift funds provided by Intel and Tektronix.",

year = "2011",

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doi = "10.1063/1.3662152",

language = "English (US)",

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AU - Cheng, K. Y.

AU - Xu, H.

AU - Stuenkel, M. E.

AU - Iverson, E. W.

AU - Liao, C. C.

AU - Yang, K. W.

AU - Feng, M.

AU - Cheng, K. Y.

N1 - Funding Information: M. Feng is grateful for the support of the Nick Holonyak, Jr. Chair Professorship of Electrical and Computer Engineering. The authors would like to give thanks for funding support from the Defense Advanced Research Projects Agency (DARPA)-TFAST program, DARPA-UPI program, and BAE Systems as well as for the gift funds provided by Intel and Tektronix.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The influence of energy band alignment on carrier transport and signal integrity is investigated on fabricated Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs. The Type-I double heterojunction bipolar transistor (DHBT) requires the use of a transition region (setback and superlattice layer) in base-collector hetero-interface to minimize the conduction band discontinuity that can cause current blocking in the collector I-V characteristics. Despite the effort, Type-I DHBT exhibits gain compression and base charge accumulation at high current injection, giving a nonlinear microwave operation. In contrast, the Type-I/II DHBT has a favorable band alignment and permits hot electron injection without impedance in both emitter-base and base-collector junctions, resulting in considerable microwave linearity improvement.

AB - The influence of energy band alignment on carrier transport and signal integrity is investigated on fabricated Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs. The Type-I double heterojunction bipolar transistor (DHBT) requires the use of a transition region (setback and superlattice layer) in base-collector hetero-interface to minimize the conduction band discontinuity that can cause current blocking in the collector I-V characteristics. Despite the effort, Type-I DHBT exhibits gain compression and base charge accumulation at high current injection, giving a nonlinear microwave operation. In contrast, the Type-I/II DHBT has a favorable band alignment and permits hot electron injection without impedance in both emitter-base and base-collector junctions, resulting in considerable microwave linearity improvement.

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Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

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