Abstract
We present data and describe analytically the "trade-off" between collector current gain and the differential optical gain of a heterojunction bipolar transistor laser (TL). The electrical-optical gain relationship shows that a reduction in the transistor current gain is accompanied by an increase in the differential optical gain of the TL and, as a consequence, results in a larger optical modulation bandwidth. Third-terminal electrical control can be used to enhance the optical bandwidth of a TL beyond the "gain- clamped" cutoff limitation of the carrier-photon (population) resonance characteristic of a diode laser.
Original language | English (US) |
---|---|
Article number | 013509 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 1 |
DOIs | |
State | Published - 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)