Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

Iman Taghavi; Hassan Kaatuzian; Jean Pierre Leburton

doi:10.1063/1.4727898

Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

Iman Taghavi, Hassan Kaatuzian, Jean Pierre Leburton

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the multiple quantum well heterojunction bipolar transistor laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of ≈60 GHz is achieved in the case of 5 quantum wells each of 70 Å widths and a cavity length of 200 μm.

Original language	English (US)
Article number	231114
Journal	Applied Physics Letters
Volume	100
Issue number	23
DOIs	https://doi.org/10.1063/1.4727898
State	Published - Jun 4 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4727898

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@article{c2ef03cbb02f47e6b4d8e92df4bcbbd0,

title = "Bandwidth enhancement and optical performances of multiple quantum well transistor lasers",

abstract = "A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the multiple quantum well heterojunction bipolar transistor laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of ≈60 GHz is achieved in the case of 5 quantum wells each of 70 {\AA} widths and a cavity length of 200 μm.",

author = "Iman Taghavi and Hassan Kaatuzian and Leburton, {Jean Pierre}",

note = "Funding Information: The authors would like to thank the Beckman Institute and University of Illinois for support. One of the authors (I.T.) is also grateful for the support of the Ministry of Science, Research and Technology of Iran. ",

year = "2012",

month = jun,

day = "4",

doi = "10.1063/1.4727898",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

AU - Taghavi, Iman

AU - Kaatuzian, Hassan

AU - Leburton, Jean Pierre

N1 - Funding Information: The authors would like to thank the Beckman Institute and University of Illinois for support. One of the authors (I.T.) is also grateful for the support of the Ministry of Science, Research and Technology of Iran.

PY - 2012/6/4

Y1 - 2012/6/4

N2 - A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the multiple quantum well heterojunction bipolar transistor laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of ≈60 GHz is achieved in the case of 5 quantum wells each of 70 Å widths and a cavity length of 200 μm.

AB - A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the multiple quantum well heterojunction bipolar transistor laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of ≈60 GHz is achieved in the case of 5 quantum wells each of 70 Å widths and a cavity length of 200 μm.

UR - http://www.scopus.com/inward/record.url?scp=84862117982&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862117982&partnerID=8YFLogxK

U2 - 10.1063/1.4727898

DO - 10.1063/1.4727898

M3 - Article

AN - SCOPUS:84862117982

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231114

ER -

Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

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