Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

Iman Taghavi, Hassan Kaatuzian, Jean Pierre Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the multiple quantum well heterojunction bipolar transistor laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of ≈60 GHz is achieved in the case of 5 quantum wells each of 70 Å widths and a cavity length of 200 μm.

Original languageEnglish (US)
Article number231114
JournalApplied Physics Letters
Volume100
Issue number23
DOIs
StatePublished - Jun 4 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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