Bandstructure engineering with a two-dimensional patterned quantum dot lattice

V. B. Verma, N. L. Dias, U. Reddy, K. P. Bassett, X. Li, J. J. Coleman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A semiconductor laser with active layer consisting of a patterned quantum dot lattice U demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.

Original languageEnglish (US)
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
StatePublished - Oct 11 2010
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period5/16/105/21/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Fingerprint Dive into the research topics of 'Bandstructure engineering with a two-dimensional patterned quantum dot lattice'. Together they form a unique fingerprint.

  • Cite this

    Verma, V. B., Dias, N. L., Reddy, U., Bassett, K. P., Li, X., & Coleman, J. J. (2010). Bandstructure engineering with a two-dimensional patterned quantum dot lattice. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 [5500020] (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).