Abstract
A semiconductor laser with active layer consisting of a patterned quantum dot lattice demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference on Lasers and Electro-Optics, CLEO 2010 |
| State | Published - 2010 |
| Event | Conference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States Duration: May 16 2010 → May 21 2010 |
Other
| Other | Conference on Lasers and Electro-Optics, CLEO 2010 |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 5/16/10 → 5/21/10 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics
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Cite this
Verma, V. B., Dias, N. L., Reddy, U., Bassett, K. P., Li, X., & Coleman, J. J. (2010). Bandstructure engineering with a two-dimensional patterned quantum dot lattice. In Conference on Lasers and Electro-Optics, CLEO 2010