Bandstructure engineering with a two-dimensional patterned quantum dot lattice

V. B. Verma, N. L. Dias, U. Reddy, K. P. Bassett, Xiuling Li, J. J. Coleman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A semiconductor laser with active layer consisting of a patterned quantum dot lattice demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
StatePublished - 2010
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Other

OtherConference on Lasers and Electro-Optics, CLEO 2010
CountryUnited States
CitySan Jose, CA
Period5/16/105/21/10

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Verma, V. B., Dias, N. L., Reddy, U., Bassett, K. P., Li, X., & Coleman, J. J. (2010). Bandstructure engineering with a two-dimensional patterned quantum dot lattice. In Conference on Lasers and Electro-Optics, CLEO 2010