Bandstructure engineering with a two-dimensional patterned quantum dot lattice

V. B. Verma, N. L. Dias, U. Reddy, K. P. Bassett, Xiuling Li, J. J. Coleman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A semiconductor laser with active layer consisting of a patterned quantum dot lattice demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
StatePublished - 2010
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Other

OtherConference on Lasers and Electro-Optics, CLEO 2010
CountryUnited States
CitySan Jose, CA
Period5/16/105/21/10

Fingerprint

Excited states
Semiconductor quantum dots
Semiconductor lasers
lasing
semiconductor lasers
quantum dots
engineering
excitation

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Verma, V. B., Dias, N. L., Reddy, U., Bassett, K. P., Li, X., & Coleman, J. J. (2010). Bandstructure engineering with a two-dimensional patterned quantum dot lattice. In Conference on Lasers and Electro-Optics, CLEO 2010

Bandstructure engineering with a two-dimensional patterned quantum dot lattice. / Verma, V. B.; Dias, N. L.; Reddy, U.; Bassett, K. P.; Li, Xiuling; Coleman, J. J.

Conference on Lasers and Electro-Optics, CLEO 2010. 2010.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Verma, VB, Dias, NL, Reddy, U, Bassett, KP, Li, X & Coleman, JJ 2010, Bandstructure engineering with a two-dimensional patterned quantum dot lattice. in Conference on Lasers and Electro-Optics, CLEO 2010. Conference on Lasers and Electro-Optics, CLEO 2010, San Jose, CA, United States, 5/16/10.
Verma VB, Dias NL, Reddy U, Bassett KP, Li X, Coleman JJ. Bandstructure engineering with a two-dimensional patterned quantum dot lattice. In Conference on Lasers and Electro-Optics, CLEO 2010. 2010
Verma, V. B. ; Dias, N. L. ; Reddy, U. ; Bassett, K. P. ; Li, Xiuling ; Coleman, J. J. / Bandstructure engineering with a two-dimensional patterned quantum dot lattice. Conference on Lasers and Electro-Optics, CLEO 2010. 2010.
@inproceedings{69bbd7f9381542738c0e95cefc21f548,
title = "Bandstructure engineering with a two-dimensional patterned quantum dot lattice",
abstract = "A semiconductor laser with active layer consisting of a patterned quantum dot lattice demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.",
author = "Verma, {V. B.} and Dias, {N. L.} and U. Reddy and Bassett, {K. P.} and Xiuling Li and Coleman, {J. J.}",
year = "2010",
language = "English (US)",
isbn = "9781557528896",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2010",

}

TY - GEN

T1 - Bandstructure engineering with a two-dimensional patterned quantum dot lattice

AU - Verma, V. B.

AU - Dias, N. L.

AU - Reddy, U.

AU - Bassett, K. P.

AU - Li, Xiuling

AU - Coleman, J. J.

PY - 2010

Y1 - 2010

N2 - A semiconductor laser with active layer consisting of a patterned quantum dot lattice demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.

AB - A semiconductor laser with active layer consisting of a patterned quantum dot lattice demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.

UR - http://www.scopus.com/inward/record.url?scp=84894043135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894043135&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84894043135

SN - 9781557528896

BT - Conference on Lasers and Electro-Optics, CLEO 2010

ER -