Bandstructure engineering with a 2-D patterned quantum well superlattice

Varun Boehm Verma, Neville L. Dias, Uttam Reddy, Kevin P. Bassett, Xiuling Li, James J. Coleman

Research output: Contribution to journalArticle

Abstract

We present experimental results from an edge-emitting diode laser with an active layer consisting of a 2-D patterned quantum well superlattice. We demonstrate control over the density of optical transitions by engineering the unit cell geometry of the lattice.

Original languageEnglish (US)
Article number5724801
Pages (from-to)417-423
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number4
DOIs
StatePublished - Mar 18 2011

Keywords

  • Coupled quantum dots
  • quantum dot
  • quantum dot laser
  • quantum dot molecule

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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  • Cite this

    Verma, V. B., Dias, N. L., Reddy, U., Bassett, K. P., Li, X., & Coleman, J. J. (2011). Bandstructure engineering with a 2-D patterned quantum well superlattice. IEEE Journal of Quantum Electronics, 47(4), 417-423. [5724801]. https://doi.org/10.1109/JQE.2010.2090134