Bandstructure engineering with a 2-D patterned quantum well superlattice

Varun Boehm Verma; Neville L. Dias; Uttam Reddy; Kevin P. Bassett; Xiuling Li; James J. Coleman

doi:10.1109/JQE.2010.2090134

Bandstructure engineering with a 2-D patterned quantum well superlattice

Varun Boehm Verma, Neville L. Dias, Uttam Reddy, Kevin P. Bassett, Xiuling Li, James J. Coleman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We present experimental results from an edge-emitting diode laser with an active layer consisting of a 2-D patterned quantum well superlattice. We demonstrate control over the density of optical transitions by engineering the unit cell geometry of the lattice.

Original language	English (US)
Article number	5724801
Pages (from-to)	417-423
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	47
Issue number	4
DOIs	https://doi.org/10.1109/JQE.2010.2090134
State	Published - 2011

Keywords

Coupled quantum dots
quantum dot
quantum dot laser
quantum dot molecule

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Online availability

10.1109/JQE.2010.2090134

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title = "Bandstructure engineering with a 2-D patterned quantum well superlattice",

abstract = "We present experimental results from an edge-emitting diode laser with an active layer consisting of a 2-D patterned quantum well superlattice. We demonstrate control over the density of optical transitions by engineering the unit cell geometry of the lattice.",

keywords = "Coupled quantum dots, quantum dot, quantum dot laser, quantum dot molecule",

author = "Verma, {Varun Boehm} and Dias, {Neville L.} and Uttam Reddy and Bassett, {Kevin P.} and Xiuling Li and Coleman, {James J.}",

note = "Funding Information: Manuscript received July 6, 2010; revised September 27, 2010; accepted October 23, 2010. Date of current version March 9, 2011. This work was supported in part by the Defense Advanced Research Projects Agency under Grant 433143-874a and in part by the National Science Foundation under Grant 08-21979.",

year = "2011",

doi = "10.1109/JQE.2010.2090134",

language = "English (US)",

volume = "47",

pages = "417--423",

journal = "IEEE Journal of Quantum Electronics",

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AU - Verma, Varun Boehm

AU - Dias, Neville L.

AU - Reddy, Uttam

AU - Bassett, Kevin P.

AU - Li, Xiuling

AU - Coleman, James J.

N1 - Funding Information: Manuscript received July 6, 2010; revised September 27, 2010; accepted October 23, 2010. Date of current version March 9, 2011. This work was supported in part by the Defense Advanced Research Projects Agency under Grant 433143-874a and in part by the National Science Foundation under Grant 08-21979.

PY - 2011

Y1 - 2011

N2 - We present experimental results from an edge-emitting diode laser with an active layer consisting of a 2-D patterned quantum well superlattice. We demonstrate control over the density of optical transitions by engineering the unit cell geometry of the lattice.

AB - We present experimental results from an edge-emitting diode laser with an active layer consisting of a 2-D patterned quantum well superlattice. We demonstrate control over the density of optical transitions by engineering the unit cell geometry of the lattice.

KW - Coupled quantum dots

KW - quantum dot

KW - quantum dot laser

KW - quantum dot molecule

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DO - 10.1109/JQE.2010.2090134

M3 - Article

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Bandstructure engineering with a 2-D patterned quantum well superlattice

Abstract

Keywords

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