Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing

D. K. Sengupta; S. Kim; H. C. Kuo; A. P. Curtis; K. C. Hsieh; S. G. Bishop; M. Feng; G. E. Stillman; S. D. Gunapala; S. V. Bandara; Y. C. Chang; H. C. Liu

doi:10.1557/proc-525-385

Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing

D. K. Sengupta, S. Kim, H. C. Kuo, A. P. Curtis, K. C. Hsieh, S. G. Bishop, M. Feng, G. E. Stillman, S. D. Gunapala, S. V. Bandara, Y. C. Chang, H. C. Liu

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate that SiO₂ cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV at 900 °C has been measured and the value of the bandgap shift can be controlled by the anneal time. Theoretical modeling of the intermixing effect on the energy levels is performed based on the effective bond-orbital method, and we obtain a very good fit to the photoluminescence data. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in the responsivity characteristics.

Original language	English (US)
Pages (from-to)	385-390
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	525
DOIs	https://doi.org/10.1557/proc-525-385
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 15 1998 → Apr 16 1998

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-525-385

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Sengupta, D. K., Kim, S., Kuo, H. C., Curtis, A. P., Hsieh, K. C., Bishop, S. G., Feng, M., Stillman, G. E., Gunapala, S. D., Bandara, S. V., Chang, Y. C., & Liu, H. C. (1998). Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing. Materials Research Society Symposium - Proceedings, 525, 385-390. https://doi.org/10.1557/proc-525-385

@article{2e7f1cd9624a4ccc8c716c7893ef04e5,

title = "Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing",

abstract = "We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV at 900 °C has been measured and the value of the bandgap shift can be controlled by the anneal time. Theoretical modeling of the intermixing effect on the energy levels is performed based on the effective bond-orbital method, and we obtain a very good fit to the photoluminescence data. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in the responsivity characteristics.",

author = "Sengupta, {D. K.} and S. Kim and Kuo, {H. C.} and Curtis, {A. P.} and Hsieh, {K. C.} and Bishop, {S. G.} and M. Feng and Stillman, {G. E.} and Gunapala, {S. D.} and Bandara, {S. V.} and Chang, {Y. C.} and Liu, {H. C.}",

year = "1998",

doi = "10.1557/proc-525-385",

language = "English (US)",

volume = "525",

pages = "385--390",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 15-04-1998 Through 16-04-1998",

}

TY - JOUR

T1 - Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing

AU - Sengupta, D. K.

AU - Kim, S.

AU - Kuo, H. C.

AU - Curtis, A. P.

AU - Hsieh, K. C.

AU - Bishop, S. G.

AU - Feng, M.

AU - Stillman, G. E.

AU - Gunapala, S. D.

AU - Bandara, S. V.

AU - Chang, Y. C.

AU - Liu, H. C.

PY - 1998

Y1 - 1998

N2 - We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV at 900 °C has been measured and the value of the bandgap shift can be controlled by the anneal time. Theoretical modeling of the intermixing effect on the energy levels is performed based on the effective bond-orbital method, and we obtain a very good fit to the photoluminescence data. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in the responsivity characteristics.

AB - We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV at 900 °C has been measured and the value of the bandgap shift can be controlled by the anneal time. Theoretical modeling of the intermixing effect on the energy levels is performed based on the effective bond-orbital method, and we obtain a very good fit to the photoluminescence data. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in the responsivity characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0031641125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031641125&partnerID=8YFLogxK

U2 - 10.1557/proc-525-385

DO - 10.1557/proc-525-385

M3 - Conference article

AN - SCOPUS:0031641125

SN - 0272-9172

VL - 525

SP - 385

EP - 390

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 15 April 1998 through 16 April 1998

ER -

Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing

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