Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

M. Feng, R. Bambery, N. Holonyak

Research output: Contribution to journalArticle

Abstract

Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, Δh recombination radiation, sensitivity of Eλ 0 → Eλ 1, λ0 → λ1, λ0 > λ1) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and "slide" up and down as a function of base current (IB), collector-base voltage (VBC or VCE), and the influence of QW bandfilling (with increased sensitivity at Eλ0 → Eλ1) on photon-assisted base-collector tunneling.

Original languageEnglish (US)
Article number123505
JournalApplied Physics Letters
Volume98
Issue number12
DOIs
StatePublished - Mar 21 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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