Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

M. Feng; R. Bambery; N. Holonyak

doi:10.1063/1.3569949

Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

M. Feng, R. Bambery, N. Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, Δ_h recombination radiation, sensitivity of Eλ 0 → Eλ 1, λ₀ → λ₁, λ₀ > λ₁) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and "slide" up and down as a function of base current (I_B), collector-base voltage (VBC or VCE), and the influence of QW bandfilling (with increased sensitivity at Eλ0 → Eλ1) on photon-assisted base-collector tunneling.

Original language	English (US)
Article number	123505
Journal	Applied Physics Letters
Volume	98
Issue number	12
DOIs	https://doi.org/10.1063/1.3569949
State	Published - Mar 21 2011

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Physics and Astronomy (miscellaneous)

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10.1063/1.3569949

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abstract = "Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, Δh recombination radiation, sensitivity of Eλ 0 → Eλ 1, λ0 → λ1, λ0 > λ1) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and {"}slide{"} up and down as a function of base current (IB), collector-base voltage (VBC or VCE), and the influence of QW bandfilling (with increased sensitivity at Eλ0 → Eλ1) on photon-assisted base-collector tunneling.",

author = "M. Feng and R. Bambery and N. Holonyak",

note = "Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. The authors wish to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by the Army Research Office Grant No. W911NF-08-1-0469.",

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AU - Feng, M.

AU - Bambery, R.

AU - Holonyak, N.

N1 - Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. The authors wish to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by the Army Research Office Grant No. W911NF-08-1-0469.

PY - 2011/3/21

Y1 - 2011/3/21

N2 - Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, Δh recombination radiation, sensitivity of Eλ 0 → Eλ 1, λ0 → λ1, λ0 > λ1) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and "slide" up and down as a function of base current (IB), collector-base voltage (VBC or VCE), and the influence of QW bandfilling (with increased sensitivity at Eλ0 → Eλ1) on photon-assisted base-collector tunneling.

AB - Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, Δh recombination radiation, sensitivity of Eλ 0 → Eλ 1, λ0 → λ1, λ0 > λ1) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and "slide" up and down as a function of base current (IB), collector-base voltage (VBC or VCE), and the influence of QW bandfilling (with increased sensitivity at Eλ0 → Eλ1) on photon-assisted base-collector tunneling.

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Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

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