Band-structure dependence of impact ionization rate in GaAs

K. Kim, K. Kahen, J. P. Leburton, K. Hess

Research output: Contribution to journalArticlepeer-review


The band-structure dependence of the electron impact ionization rate in GaAs is studied by using local and nonlocal pseudopotential band structures and a Monte Carlo simulation code for the impact ionization rate α. We find that the difference in α for the two band structures reflects mainly the difference in the density of states.

Original languageEnglish (US)
Pages (from-to)2595-2596
Number of pages2
JournalJournal of Applied Physics
Issue number7
StatePublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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