Abstract
The band-structure dependence of the electron impact ionization rate in GaAs is studied by using local and nonlocal pseudopotential band structures and a Monte Carlo simulation code for the impact ionization rate α. We find that the difference in α for the two band structures reflects mainly the difference in the density of states.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2595-2596 |
| Number of pages | 2 |
| Journal | Journal of Applied Physics |
| Volume | 59 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1986 |
ASJC Scopus subject areas
- Physics and Astronomy(all)