Band lineup between silicon and transparent conducting oxides

B. Höffling, A. Schleife, F. Fuchs, C. Rödl, F. Bechstedt

Research output: Contribution to journalArticlepeer-review

Abstract

Modern quasiparticle calculations based on hybrid functionals are used to predict natural band discontinuities between silicon and In2O 3, ZnO, and SnO2 by two alignment methods, a modified Tersoff method for the branch-point energy and the Shockley-Anderson model via the electron affinity rule. The results of both methods are found to be in good agreement. A tendency for misaligned type-II heterostructures is predicted, indicating efficient electron-hole separation at the Si-oxide interfaces.

Original languageEnglish (US)
Article number032116
JournalApplied Physics Letters
Volume97
Issue number3
DOIs
StatePublished - Jul 19 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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