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Band bending at the Si(1 1 1)-SiO
2
interface induced by low-energy ion bombardment
Kapil Dev
,
E. G. Seebauer
Chemical and Biomolecular Engineering
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2
interface induced by low-energy ion bombardment'. Together they form a unique fingerprint.
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Keyphrases
Interface-induced
100%
Electrically Active Defects
25%
Material Science
Ion Bombardment
100%