Band bending at the Si(1 1 1)-SiO2 interface induced by low-energy ion bombardment

Kapil Dev, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review


Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)-SiO2 interface after sub-keV Ar+ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)-SiO2, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.

Original languageEnglish (US)
Pages (from-to)185-191
Number of pages7
JournalSurface Science
Issue number1-3
StatePublished - Feb 10 2004


  • Ion bombardment
  • Semiconductor-semiconductor interfaces
  • Silicon
  • Silicon oxides
  • Surface electronic phenomena (work function, surface potential, surface states, etc.)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


Dive into the research topics of 'Band bending at the Si(1 1 1)-SiO2 interface induced by low-energy ion bombardment'. Together they form a unique fingerprint.

Cite this