Band bending at the Si(1 1 1)-SiO2 interface induced by low-energy ion bombardment

Kapil Dev; E. G. Seebauer

doi:10.1016/j.susc.2003.12.018

Band bending at the Si(1 1 1)-SiO₂ interface induced by low-energy ion bombardment

Kapil Dev, E. G. Seebauer

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)-SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)-SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.

Original language	English (US)
Pages (from-to)	185-191
Number of pages	7
Journal	Surface Science
Volume	550
Issue number	1-3
DOIs	https://doi.org/10.1016/j.susc.2003.12.018
State	Published - Feb 10 2004

Keywords

Ion bombardment
Semiconductor-semiconductor interfaces
Silicon
Silicon oxides
Surface electronic phenomena (work function, surface potential, surface states, etc.)

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Online availability

10.1016/j.susc.2003.12.018

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Cite this

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title = "Band bending at the Si(1 1 1)-SiO2 interface induced by low-energy ion bombardment",

abstract = "Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)-SiO2 interface after sub-keV Ar+ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)-SiO2, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.",

keywords = "Ion bombardment, Semiconductor-semiconductor interfaces, Silicon, Silicon oxides, Surface electronic phenomena (work function, surface potential, surface states, etc.)",

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doi = "10.1016/j.susc.2003.12.018",

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AU - Seebauer, E. G.

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AB - Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)-SiO2 interface after sub-keV Ar+ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)-SiO2, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.

KW - Ion bombardment

KW - Semiconductor-semiconductor interfaces

KW - Silicon

KW - Silicon oxides

KW - Surface electronic phenomena (work function, surface potential, surface states, etc.)

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